1 State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences(CAS), Shanghai 200050, China; 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; 3 CAS Center for Excellence in Superconducting Electronics, Shanghai 200050, China
Abstract Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices, we propose a superconducting nanowire interference device in this study, which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor. A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device. The current-voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility. Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices.
Received: 09 March 2020
Revised: 08 April 2020
Accepted manuscript online: 07 May 2020
PACS:
85.25.Am
(Superconducting device characterization, design, and modeling)
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0304000), the National Natural Science Foundation of China (Grant Nos. 61671438 and 61827823), the Science and Technology Commission of Shanghai Municipality, China (Grant No. 18511110200), and the Program of Shanghai Academic/Technology Research Leader, China (Grant No. 18XD1404600).
Corresponding Authors:
Yong-Liang Wang, Li-Xing You
E-mail: wangyl@mail.sim.ac.cn;lxyou@mail.sim.ac.cn
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