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Chin. Phys. B, 2020, Vol. 29(8): 087305    DOI: 10.1088/1674-1056/ab96a4

Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures

Sheng Hu(胡晟)1, Ling Yang(杨凌)1, Min-Han Mi(宓珉瀚)2, Bin Hou(侯斌)2, Sheng Liu(刘晟)3, Meng Zhang(张濛)1, Mei Wu(武玫)2, Qing Zhu(朱青)1, Sheng Wu(武盛)2, Yang Lu(卢阳)2, Jie-Jie Zhu(祝杰杰)1, Xiao-Wei Zhou(周小伟)1, Ling Lv(吕玲)1, Xiao-Hua Ma(马晓华)2, Yue Hao(郝跃)2
1 State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 School of Microelectronics, Xidian University, Xi'an 710071, China;
3 Shanghai Precision Metrology and Testing Research Institute, Shanghai 201109, China
Abstract  The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases (3DEGs) at the GaN/graded AlGaN:Si heterostructure and create a composite two-dimensional (2D)-three-dimensional (3D) channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C heterostructure (DH:Si/C). Frequency-dependent capacitances and conductance are measured to investigate the characteristics of the multi-temperature trap states of in DH:Si/C and AlGaN/GaN/GaN:C heterostructure (SH:C). There are fast, medium, and slow trap states in DH:Si/C, while only medium trap states exist in SH:C. The time constant/trap density for medium trap state in SH:C heterostructure are (11 μs-17.7 μs)/(1.1×1013 cm-2·eV-1-3.9×1013 cm-2·eV-1) and (8.7 μs-14.1 μs)/(0.7×1013 cm-2·eV-1-1.9×1013 cm-2·eV-1) at 300 K and 500 K respectively. The time constant/trap density for fast, medium, and slow trap states in DH:Si/C heterostructure are (4.2 μs-7.7 μs)/(1.5×1013 cm-2·eV-1-3.2×1013 cm-2·eV-1), (6.8 μs-11.8 μs)/(0.8×1013 cm-2·eV-1-2.8×1013 cm-2·eV-1), (30.1 μs-151 μs)/(7.5×1012 cm-2·eV-1-7.8×1012 cm-2·eV-1) at 300 K and (3.5 μs-6.5 μs)/(0.9×1013 cm-2·eV-1-1.8×1013 cm-2·eV-1), (4.9 μs-9.4 μs)/(0.6×1013 cm-2·eV-1-1.7×1013 cm-2·eV-1), (20.6 μs-61.9 μs)/(3.2×1012 cm-2·eV-1-3.5×1012 cm-2·eV-1) at 500 K, respectively. The DH:Si/C structure can effectively reduce the density of medium trap states compared with SH:C structure.
Keywords:  AlGaN/GaN HEMT      multi-heterostructure      composite 2D-3D channel      multi-temperature trap states  
Received:  13 March 2020      Revised:  21 May 2020      Published:  05 August 2020
PACS:  73.61.Ey (III-V semiconductors)  
  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB1802100), the Natural Science Foundation of Shaanxi Province, China (Grant Nos. 2020JM-191 and 2018HJCG-20), the National Natural Science Foundation of China (Grant Nos. 61904135, 61704124, and 61534007), the China Postdoctoral Science Foundation (Grant Nos. 2018M640957 and 2019M663930XB), and the Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation, China (Grant No. XWYCXY-012019007).
Corresponding Authors:  Ling Yang     E-mail:

Cite this article: 

Sheng Hu(胡晟), Ling Yang(杨凌), Min-Han Mi(宓珉瀚), Bin Hou(侯斌), Sheng Liu(刘晟), Meng Zhang(张濛), Mei Wu(武玫), Qing Zhu(朱青), Sheng Wu(武盛), Yang Lu(卢阳), Jie-Jie Zhu(祝杰杰), Xiao-Wei Zhou(周小伟), Ling Lv(吕玲), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures 2020 Chin. Phys. B 29 087305

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