Flux-to-voltage characteristic simulation of superconducting nanowire interference device

doi:10.1088/1674-1056/ab90f4

Abstract Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices, we propose a superconducting nanowire interference device in this study, which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor. A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device. The current-voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility. Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices.

Keywords: superconducting nanowire switching effect flux-to-voltage conversion interference device

Received: 09 March 2020
Revised: 08 April 2020
Accepted manuscript online: 07 May 2020

PACS:

85.25.Am

(Superconducting device characterization, design, and modeling)

Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0304000), the National Natural Science Foundation of China (Grant Nos. 61671438 and 61827823), the Science and Technology Commission of Shanghai Municipality, China (Grant No. 18511110200), and the Program of Shanghai Academic/Technology Research Leader, China (Grant No. 18XD1404600).

Corresponding Authors: Yong-Liang Wang, Li-Xing You
E-mail: wangyl@mail.sim.ac.cn;lxyou@mail.sim.ac.cn

Cite this article:

Xing-Yu Zhang(张兴雨), Yong-Liang Wang(王永良), Chao-Lin Lv(吕超林), Li-Xing You(尤立星), Hao Li(李浩), Zhen Wang(王镇), Xiao-Ming Xie(谢晓明) Flux-to-voltage characteristic simulation of superconducting nanowire interference device 2020 Chin. Phys. B 29 098501

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