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Chin. Phys. B, 2020, Vol. 29(1): 014201    DOI: 10.1088/1674-1056/ab5787

Broadband visible light absorber based on ultrathin semiconductor nanostructures

Lin-Jin Huang(黄林锦), Jia-Qi Li(李嘉麒), Man-Yi Lu(卢漫仪), Yan-Quan Chen(陈彦权), Hong-Ji Zhu(朱宏基), Hai-Ying Liu(刘海英)
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Abstract  It is desirable to have electromagnetic wave absorbers with ultrathin structural thickness and broader spectral absorption bandwidth with numerous applications in optoelectronics. In this paper, we theoretically propose and numerically demonstrate a novel ultrathin nanostructure absorber composed of semiconductor nanoring array and a uniform gold substrate. The results show that the absorption covers the entire visible light region, achieving an average absorption rate more than 90% in a wavelength range from 300 nm to 740 nm and a nearly perfect absorption from 450 nm to 500 nm, and the polarization insensitivity performance is particularly great. The absorption performance is mainly caused by the electrical resonance and magnetic resonance of semiconductor nanoring array as well as the field coupling effects. Our designed broadband visible light absorber has wide application prospects in the fields of thermal photovoltaics and photodetectors.
Keywords:  ultrathin nanostructures      electrical resonance      magnetic resonance      polarization insensitivity  
Received:  01 August 2019      Revised:  05 September 2019      Accepted manuscript online: 
PACS:  42.25.Bs (Wave propagation, transmission and absorption)  
  78.67.Pt (Multilayers; superlattices; photonic structures; metamaterials)  
  78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))  
Fund: Project supported by the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2018A030313854 and 2016A030313851).
Corresponding Authors:  Hai-Ying Liu     E-mail:

Cite this article: 

Lin-Jin Huang(黄林锦), Jia-Qi Li(李嘉麒), Man-Yi Lu(卢漫仪), Yan-Quan Chen(陈彦权), Hong-Ji Zhu(朱宏基), Hai-Ying Liu(刘海英) Broadband visible light absorber based on ultrathin semiconductor nanostructures 2020 Chin. Phys. B 29 014201

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