| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Multi-carrier transport in ZrTe5 film |
| Fangdong Tang(汤方栋)1,2, Peipei Wang(王培培)2, Peng Wang(王鹏)2, Yuan Gan(甘远)2, Le Wang(王乐)1, Wei Zhang(张威)1, Liyuan Zhang(张立源)2 |
1 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natual Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
2 Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China |
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Abstract Single-layered zirconium pentatelluride (ZrTe5) has been predicted to be a large-gap two-dimensional (2D) topological insulator, which has attracted particular attention in topological phase transitions and potential device applications. Herein, we investigated the transport properties in ZrTe5 films as a function of thickness, ranging from a few nm to several hundred nm. We determined that the temperature of the resistivity anomaly peak (Tp) tends to increase as the thickness decreases. Moreover, at a critical thickness of~40 nm, the dominating carriers in the films change from n-type to p-type. A comprehensive investigation of Shubnikov-de Hass (SdH) oscillations and Hall resistance at variable temperatures revealed a multi-carrier transport tendency in the thin films. We determined the carrier densities and mobilities of two majority carriers using the simplified two-carrier model. The electron carriers can be attributed to the Dirac band with a non-trivial Berry phase π, while the hole carriers may originate from surface chemical reaction or unintentional doping during the microfabrication process. It is necessary to encapsulate the ZrTe5 film in an inert or vacuum environment to potentially achieve a substantial improvement in device quality.
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Received: 10 April 2018
Revised: 01 June 2018
Accepted manuscript online:
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PACS:
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73.50.-h
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(Electronic transport phenomena in thin films)
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73.23.-b
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(Electronic transport in mesoscopic systems)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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| Fund: Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991). |
Corresponding Authors:
Le Wang
E-mail: le.wang@ruc.edu.cn
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Cite this article:
Fangdong Tang(汤方栋), Peipei Wang(王培培), Peng Wang(王鹏), Yuan Gan(甘远), Le Wang(王乐), Wei Zhang(张威), Liyuan Zhang(张立源) Multi-carrier transport in ZrTe5 film 2018 Chin. Phys. B 27 087307
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