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Chin. Phys. B, 2018, Vol. 27(8): 087308    DOI: 10.1088/1674-1056/27/8/087308
Special Issue: SPECIAL TOPIC — Nanophotonics
SPECIAL TOPIC—Nanophotonics Prev   Next  

Black phosphorus-based field effect transistor devices for Ag ions detection

Hui-De Wang(王慧德)1, David K Sang1, Zhi-Nan Guo(郭志男)1, Rui Cao(曹睿)1,2, Jin-Lai Zhao(赵劲来)2, Muhammad Najeeb Ullah Shah1, Tao-Jian Fan(范涛健)1, Dian-Yuan Fan(范滇元)1, Han Zhang(张晗)1
1 Shenzhen Key Laboratory of Two-Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
2 Faculty of Information Technology, Macau University of Science and Technology, Macao, China
Abstract  

Black phosphorus (BP), an attractive two-dimensional (2D) semiconductor, is widely used in the fields of optoelectronic devices, biomedicine, and chemical sensing. Silver ion (Ag+), a commonly used additive in food industry, can sterilize and keep food fresh. But excessive intake of Ag+ will harm human health. Therefore, high sensitive, fast and simple Ag+ detection method is significant. Here, a high-performance BP field effect transistor (FET) sensor is fabricated for Ag+ detection with high sensitivity, rapid detection speed, and wide detection concentration range. The detection limit for Ag+ is 10-10 mol/L. Testing time for each sample by this method is 60 s. Besides, the mechanism of BP-FET sensor for Ag+ detection is investigated systematically. The simple BP-FET sensor may inspire some relevant research and potential applications, such as providing an effective method for the actual detection of Ag+, especially in witnessed inspections field of food.

Keywords:  black phosphorus      semiconductor devices      chemical sensing      witnessed inspections  
Received:  29 April 2018      Revised:  21 May 2018      Accepted manuscript online: 
PACS:  73.63.-b (Electronic transport in nanoscale materials and structures)  
  85.30.Tv (Field effect devices)  
  07.07.Df (Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)  
Fund: 

Project support by the National Natural Science Foundation of China (Grant Nos. 61605131 and 61435010) and the Shenzhen Science and Technology Research Fund, China (Grant No. JCYJ20150324141711624).

Corresponding Authors:  Zhi-Nan Guo, Han Zhang     E-mail:  guozhinan@szu.edu.cn;hzhang@szu.edu.cn

Cite this article: 

Hui-De Wang(王慧德), David K Sang, Zhi-Nan Guo(郭志男), Rui Cao(曹睿), Jin-Lai Zhao(赵劲来), Muhammad Najeeb Ullah Shah, Tao-Jian Fan(范涛健), Dian-Yuan Fan(范滇元), Han Zhang(张晗) Black phosphorus-based field effect transistor devices for Ag ions detection 2018 Chin. Phys. B 27 087308

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