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Chin. Phys. B, 2018, Vol. 27(6): 066106    DOI: 10.1088/1674-1056/27/6/066106
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Non-monotonic dependence of current upon i-width in silicon p-i-n diodes

Zheng-Peng Pang(庞正鹏), Xin Wang(王欣), Jian Chen(陈健), Pan Yang(杨盼), Yang Zhang(张洋), Yong-Hui Tian(田永辉), Jian-Hong Yang(杨建红)
Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
Abstract  Silicon p-i-n diodes with different i-region widths are fabricated and tested. It is found that the current shows the non-monotonic behavior as a function of i-region width at a bias voltage of 1.0 V. In this paper, an analytical model is presented to explain the non-monotonic behavior, which mainly takes into account the diffusion current and recombination current contributing to the total current. The calculation results indicate that the concentration ratio of p-region to n-region plays a crucial role in the non-monotonic behavior, and the carrier lifetime also has a great influence on this abnormal phenomenon.
Keywords:  semiconductor      junction diodes      transport properties  
Received:  11 September 2017      Revised:  23 January 2018      Published:  05 June 2018
PACS:  61.82.Fk (Semiconductors)  
  85.30.Kk (Junction diodes)  
  91.60.Tn (Transport properties)  
Corresponding Authors:  Jian-Hong Yang     E-mail:  yangjh@lzu.edu.cn

Cite this article: 

Zheng-Peng Pang(庞正鹏), Xin Wang(王欣), Jian Chen(陈健), Pan Yang(杨盼), Yang Zhang(张洋), Yong-Hui Tian(田永辉), Jian-Hong Yang(杨建红) Non-monotonic dependence of current upon i-width in silicon p-i-n diodes 2018 Chin. Phys. B 27 066106

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