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Chin. Phys. B, 2016, Vol. 25(5): 058101    DOI: 10.1088/1674-1056/25/5/058101
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

Yang Liu(刘扬)1, Yongchun Yang(杨永春)1,2
1. School of Resource and Environmental Science, Lanzhou University, Lanzhou 730000, China;
2. Key Laboratory of West China's Enviromental Science, Lanzhou 730000, China
Abstract  The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop.
Keywords:  light emitting diodes      droop      Mg doping     
Received:  29 November 2015      Published:  05 May 2016
PACS:  81.05.Ea (III-V semiconductors)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  78.55.Cr (III-V semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 41171143).
Corresponding Authors:  Yongchun Yang     E-mail:  yangych@lzu.edu.cn

Cite this article: 

Yang Liu(刘扬), Yongchun Yang(杨永春) Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes 2016 Chin. Phys. B 25 058101

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