Magnetoresistance and exchange bias in high Mn content melt-spun Mn46Ni42Sn11Sb1 alloy ribbon

doi:10.1088/1674-1056/25/5/057305

Abstract Highly textured Heusler alloy Mn₄₆Ni₄₂Sn₁₁Sb₁ ribbons were prepared by melt spinning. The annealed high Mn content Mn₄₆Ni₄₂Sn₁₁Sb₁ ribbon cross-section microstructure, crystal structure, martensitic transformation (MT), and magnetoresistance (MR) properties were investigated. The MR in the annealed ribbon was assessed by the magnetic field direction perpendicular to the ribbon surface with the magnetic field up to 30 kOe. The large negative value of 25% for MR was obtained at 244 K. The exchange bias (EB) effects of the as-spun and annealed ribbons were investigated. After annealing, the EB effects have been improved by about 25 Oe at the temperature of 50 K. The magnetizations have increased approximately by 10% more than the as-spun ribbon.

Keywords: Heusler alloy melt spun magnetoresistance exchange bias

Received: 10 December 2015
Revised: 25 January 2016
Accepted manuscript online:

PACS:

73.43.Qt

(Magnetoresistance)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2012CB722801), the Postdoctoral Science Foundation of China (Grant No. 2015M571285), the National Natural Science Foundation of China (Grant No. 51401140), the Postdoctoral Research Station Foundation of Taiyuan University of Science and Technology, China (Grant Nos. 20142014, 20152041, and 20151082), the Natural Science Foundation of Shanxi Province, China (Grants Nos. 2015021019, 2015091011, and 2015081011), and the Key Team of Scientific and Technological Innovation of Shanxi Province, China (Grant No. 2013131009).

Corresponding Authors: Qingxue Huang, Fenghua Chen
E-mail: qxhuang_pd@163.com;phycfh@163.com

Cite this article:

Qingxue Huang(黄庆学), Fenghua Chen(陈峰华), Mingang Zhang(张敏刚), Xiaohong Xu(许小红) Magnetoresistance and exchange bias in high Mn content melt-spun Mn₄₆Ni₄₂Sn₁₁Sb₁ alloy ribbon 2016 Chin. Phys. B 25 057305

[1]	Sutou Y, Imano Y, Koeda N, Omori T, Kainuma R, Ishida K and Oikawa K 2004 Appl. Phys. Lett. 85 4358
[2]	Sharma V K, Chattopadhyay M K, Shaeb K H B, Chouhan A and Roy S B 2006 Appl. Phys. Lett. 89 222509
[3]	Koyama K, Okada H, Watanabe K, Kanomata T, Kainuma R, Ito W, Oikawa K and Ishida K 2006 Appl. Phys. Lett. 89 182510
[4]	Chatterjee S, Giri S, Majumdar S and De S K 2008 Phys. Rev. B 77 012404
[5]	Wang B M, Wang L, Liu Y, Zhao B C, Zhao Y, Yang Y and Zhang H 2009 J. Appl. Phys. 106 063909
[6]	Dincer I, Yüzüak E and Elerman Y 2010 J. Alloy. Compd. 506 508
[7]	Pal D, Ghosh A and Mandal K 2014 J. Magn. Magn. Mater. 360 183
[8]	Banerjee A, Chaddah P, Dash S, Kumar K, Lakhani A, Chen X and Ramanujan R V 2011 Phys. Rev. B 84 214420
[9]	Sánchez Llamazares J L, Sanchez T, Santos J D, Pérez M J, Sanchez M L, Hernando, Escoda L, Suñol J J and Varga R 2008 Appl. Phys. Lett. 92 012513
[10]	Ghosh A and Mandal K 2013 J. Phys. D: Appl. Phys. 46 435001
[11]	Ma S C, Wang D H, Zhong Z C, Luo J M, Xu J L and Du Y W 2013 Appl. Phys. Lett. 102 032407
[12]	Khan M, Pathak A K, Paudel M R, Dubenko I, Stadler S and Ali N 2008 J. Magn. Magn. Mater. 320 L21
[13]	Xuan H C, Zheng Y X, Ma S C, Cao Q Q, Wang D H and Du Y W 2010 J. Appl. Phys. 108 103920
[14]	Liu Z H, Wu Z G, Ma X Q, Wang W H, Liu Y and Wu G H 2011 J. Appl. Phys. 110 013916
[15]	Xuan H, Zhang Y, Li H, Han P, Wang D and Du Y W 2015 Phys. Status Solidi A 212 1954
[16]	Chen F H, Gong C W, Guo Y P, Zhang M G and Chai Y 2013 Phys. Status Solidi A 210 2762
[17]	Xuan H, Deng Y, Wang D, Zhang C, Han Z and Du Y 2008 J. Phys. D: Appl. Phys. 41 215002
[18]	Chen F H, Zhang M G, Chai Y S and Gong C W 2012 Phys. Status Solidi A 209 1557
[19]	Chen F H, Gong C W, Guo Y P, Zhang M G and Chai Y S 2014 Chin. Phys. B 23 067501
[20]	Esakki Muthu S, Rama Rao N V, Sridhara Rao D V, Manivel Raja M, Devarajan U and Arumugam S 2011 J. Appl. Phys. 110 023904
[21]	Xuan H C, Cao Q Q, Zhang C L, Ma S C, Chen S Y, Wang D H and Du Y W 2010 Appl. Phys. Lett. 96 202502
[22]	Wang D H, Zhang C L, Xuan H C, Han Z D, Zhang J R, Tang S L, Gu B X and Du Y W 2007 J. Appl. Phys. 102 013909
[23]	Xuan H C, Wang D H, Zhang C L, Han Z D, Liu H S, Gu B X and Du Y W 2007 Solid State Commun. 142 591
[24]	Kozina X, Karel J, Ouardi S, Chadov S, Fecher G H, Felser C, Stryganyuk G, Balke B, Ishikawa T, Uemura T, Yamamoto M, Ikenaga E, Ueda S and Kobayashi K 2014 Phys. Rev. B 89 125116
[25]	Feng Y, Tian C L, Yuan H K, Kuang A L and Chen H 2015 J. Phys. D: Appl. Phys. 48 445003
[26]	Feng Y, Zhou T, Chen X, Yuan H and Chen H 2015 J. Magn. Magn. Mater. 387 118
[27]	Feng Y, Zhou T, Chen X, Yuan H and Chen H 2015 J. Phys. D: Appl. Phys. 48 285302
[28]	Zhao X G, Tong M, Shih C W, Li B, Chang W C, Liu W and Zhang Z D 2013 J. Appl. Phys. 113 17A913
[29]	Wang W, Yu J, Zhai Q, Luo Z and Zheng H 2013 Intermetallics 42 126
[30]	Hernando B, Sánchez Llamazares J L, Prida V M, Baldomir D, Serantes D, Ilyn M and González J 2009 Appl. Phys. Lett. 94 222502
[31]	Ghosh A and Mandal K 2014 Appl. Phys. Lett. 104 031905
[32]	Zhao X G, Hsieh C C, Lai J H, Cheng X J, Chang W C, Cui W B, Liu W and Zhang Z D 2010 Scripta Mater. 63 250

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Magnetoresistance and exchange bias in high Mn content melt-spun Mn46Ni42Sn11Sb1 alloy ribbon

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Magnetoresistance and exchange bias in high Mn content melt-spun Mn₄₆Ni₄₂Sn₁₁Sb₁ alloy ribbon