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Chin. Phys. B, 2015, Vol. 24(7): 078503    DOI: 10.1088/1674-1056/24/7/078503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Li Jin, Xiong Bing, Sun Chang-Zheng, Luo Yi, Wang Jian, Hao Zhi-Biao, Han Yan-Jun, Wang Lai, Li Hong-Tao
Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Abstract  

A backside illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the 22-μm-diameter device, the maximum responsivity at 1.55 μm is 0.5 A/W, and the 3-dB cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-dB compression point is measured to be 54 mA at 25 GHz, with a corresponding output radio frequency (RF) power of up to 15.5 dBm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon.

Keywords:  wide bandwidth      high power      uni-traveling-carrier photodiodes     
Received:  01 February 2015      Published:  05 July 2015
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  78.55.Cr (III-V semiconductors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: 

Project supported by the National Basic Research Program of China (Grant Nos. 2012CB315605 and 2014CB340002), the National Natural Science Foundation of China (Grant Nos. 61176015, 61176059, 61210014, 61321004, and 61307024), and the Open Fund of State Key Laboratory on Integrated Optoelectronics, China (Grant Nos. IOSKL2012KF08 and IOSKL2014KF09).

Corresponding Authors:  Xiong Bing, Luo Yi     E-mail:  bxiong@tsinghua.edu.cn;luoy@tsinghua.edu.cn

Cite this article: 

Li Jin, Xiong Bing, Sun Chang-Zheng, Luo Yi, Wang Jian, Hao Zhi-Biao, Han Yan-Jun, Wang Lai, Li Hong-Tao Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance 2015 Chin. Phys. B 24 078503

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