Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers

doi:10.1088/1674-1056/23/5/058502

Abstract GaN-based multiple quantum well light-emitting diodes (LEDs) with conventional and superlattice barriers have been investigated numerically. Simulation results demonstrate using InGaN/GaN superlattices as barriers can effectively enhance performances of the GaN-Based LEDs, mainly owing to the improvement of hole injection and transport among the MQW active region. Meanwhile, the improved electron capture decreases the electron leakage and alleviates the efficiency droop. The weak polarization field induced by the superlattice structure strengthens the intensity of the emission spectrum and leads to a blue-shift relative to the conventional one.

Keywords: superlattice barrier numerical simulation hole injection GaN-based LED

Received: 24 July 2013
Revised: 09 November 2013
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	78.60.Fi	(Electroluminescence)
	87.15.A-	(Theory, modeling, and computer simulation)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60877069) and the Science and Technology Key Program of Guangdong Province, China (Grant Nos. 2011A081301004 and 2012A080304006).

Corresponding Authors: Sun Hui-Qing
E-mail: sunhq@scnu.edu.cn

About author: 85.60.Jb; 78.60.Fi; 87.15.A-; 73.61.Ey

Cite this article:

Cai Jin-Xin (蔡金鑫), Sun Hui-Qing (孙慧卿), Zheng Huan (郑欢), Zhang Pan-Jun (张盼君), Guo Zhi-You (郭志友) Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers 2014 Chin. Phys. B 23 058502

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Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers

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