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Chin. Phys. B, 2013, Vol. 22(5): 056103    DOI: 10.1088/1674-1056/22/5/056103
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A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

Sun Ya-Bina b, Fu Juna b, Xu Juna b, Wang Yu-Donga b, Zhou Weia b, Zhang Weia, Cui Jiea, Li Gao-Qinga, Liu Zhi-Honga b, Yu Yong-Taoc, Ma Ying-Qic, Feng Guo-Qiangc, Han Jian-Weic
a Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
b Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China;
c National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
Abstract  A study on single event transient (SET) induced by pulsed laser in silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.
Keywords:  single event transient (SET)      pulsed laser      charge collection      load resistance      SiGe heterojunction bipolar transistor (HBT)     
Received:  27 November 2012      Published:  01 April 2013
PACS:  61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation))  
  73.40.Lp  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60976013).
Corresponding Authors:  Sun Ya-Bin     E-mail:  sunyb10@mails.tsinghua.edu.cn

Cite this article: 

Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong, Yu Yong-Tao, Ma Ying-Qi, Feng Guo-Qiang, Han Jian-Wei A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor 2013 Chin. Phys. B 22 056103

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