Please wait a minute...
Chin. Phys. B, 2013, Vol. 22(5): 056103    DOI: 10.1088/1674-1056/22/5/056103

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

Sun Ya-Bina b, Fu Juna b, Xu Juna b, Wang Yu-Donga b, Zhou Weia b, Zhang Weia, Cui Jiea, Li Gao-Qinga, Liu Zhi-Honga b, Yu Yong-Taoc, Ma Ying-Qic, Feng Guo-Qiangc, Han Jian-Weic
a Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
b Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China;
c National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
Abstract  A study on single event transient (SET) induced by pulsed laser in silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.
Keywords:  single event transient (SET)      pulsed laser      charge collection      load resistance      SiGe heterojunction bipolar transistor (HBT)     
Received:  27 November 2012      Published:  01 April 2013
PACS:  61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60976013).
Corresponding Authors:  Sun Ya-Bin     E-mail:

Cite this article: 

Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong, Yu Yong-Tao, Ma Ying-Qi, Feng Guo-Qiang, Han Jian-Wei A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor 2013 Chin. Phys. B 22 056103

[1] Xue S B, Huang R, Huang D T, Wang S H, Tan F, Wang J, An X and Zhang X 2010 Chin. Phys. B 19 117307
[2] Chen H, Hao Y, Ma X, Zhang J, Li K, Cao Y, Zhang J and Zhou P 2006 Chin. Phys. 15 0645
[3] Diestelhorst R M, Finn S, Jun B, Sutton A K, Cheng P, Marshall P W, Cressler J D, Schrimpf R D, Fleetwood D M, Gustat H, Heinemann B, Fischer G G, Knoll D and Tillack B 2007 IEEE Trans. Nucl. Sci. 54 2190
[4] Öjefors E and Pfeiffer U R 2010 IEEE International Solid-State Circuits Conference, February 7-11, 2010 San Francisco, California, USA, p. 430
[5] Chantre A, Chevalier P, Lacave T, Avenier G, Buczko M, Campidelli Y, Depoyan L, Berthier L and Gacquiére C 2010 Proceedings of the 5th European Microwave Integrated Circuits Conference, September 27-28, 2010 Paris, France, p. 21
[6] Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Chen M, Bi D W and Zou S C 2011 Chin. Phys. B 20 120702
[7] Zhang G Q, Guo Q, Lu W and Ren D Y 2004 Chin. Phys. 13 948
[8] Chen C, Tian B L, Liu X Z, Dai L P, Deng X W and Chen Y F 2012 Chin. Phys. B 21 078503
[9] Ullan M, Diez S, Campabadala F, Lozanoa M, Pellegrinia G, Knollb D and Heinemannb B 2007 Nucl. Instr. Meth. A 579 828
[10] Comeau J P, Sutton A K, Haugerud B M, Cressler J D, Kuo W M L, Marshall P W, Reed R A, Karroy A and Art R V 2004 IEEE Trans. Nucl. Sci. 51 3743
[11] Pellish J A, Reed R A, McMorrow D et al. 2009 IEEE Trans. Nucl. Sci. 56 3078
[12] Marshall P, Carts M, Campbell A, Ladbury R, Reed R, Marshall C, Currie S, McMorrow D, Buchner S, Seidleck C, Riggs P, Fritz K, Randall B and Gilbert B 2004 IEEE Trans. Nucl. Sci. 51 3457
[13] Hansen D L, Chu P, Jobe K, McKay A L and Warren H P 2006 IEEE Trans. Nucl. Sci. 53 3579
[14] Niu G, Cressler J D, Shoga M, Jobe K, Chu P and Harame D L 2000 IEEE Trans. Nucl. Sci. 47 2682
[15] Varadharajaperumal M, Niu G, Cressler J D, Reed R A and Marshall P W 2004 IEEE Trans. Nucl. Sci. 51 3298
[16] Melinger J S, McMorrow D and Campbell A B 1998 J. Appl. Phys. 84 690
[17] Darracq F, Lapuyade H, Buard N, Mounsi F, Foucher B, Fouillat P, Calvet M C and Dufayel R 2002 IEEE Trans. Nucl. Sci. 49 2997
[18] Onoda S, Ohshima T, Hirao T, Mishima K, Hishiki S, Iwamoto N and Kawano K 2007 IEEE Trans. Nucl. Sci. 54 2706
[1] A synaptic transistor with NdNiO3
Xiang Wang(汪翔), Chen Ge(葛琛), Ge Li(李格), Er-Jia Guo(郭尔佳), Meng He(何萌), Can Wang(王灿), Guo-Zhen Yang(杨国桢), Kui-Juan Jin(金奎娟). Chin. Phys. B, 2020, 29(9): 098101.
[2] Synthesis of new silicene structure and its energy band properties
Wei-Qi Huang(黄伟其), Shi-Rong Liu(刘世荣), Hong-Yan Peng(彭鸿雁), Xin Li(李鑫), Zhong-Mei Huang(黄忠梅). Chin. Phys. B, 2020, 29(8): 084202.
[3] Gastroscopy-conjugated photoacoustic and ultrasonic dual-mode imaging for detection of submucosal gastric cancer: in vitro study
Huaqin Wu(吴华钦), Haiyang Song(宋海洋), Yudian Huang(黄玉钿), Zhifang Li(李志芳), Shulian Wu(吴淑莲), Xiaoman Zhang(章小曼), Hui Li(李晖). Chin. Phys. B, 2020, 29(6): 064205.
[4] Processes underlying the laser photochromic effect in colloidal plasmonic nanoparticle aggregates
A E Ershov, V S Gerasimov, I L Isaev, A P Gavrilyuk, S V Karpov. Chin. Phys. B, 2020, 29(3): 037802.
[5] Growth of high quality Sr2IrO4 epitaxial thin films onconductive substrates
Hui Xu(徐珲), Zhangzhang Cui(崔璋璋), Xiaofang Zhai(翟晓芳), Yalin Lu(陆亚林). Chin. Phys. B, 2019, 28(7): 078102.
[6] Preparation of Ga2O3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition
Y M Lu(吕有明), C Li(李超), X H Chen(陈相和), S Han(韩瞬), P J Cao(曹培江), F Jia(贾芳), Y X Zeng(曾玉祥), X K Liu(刘新科), W Y Xu(许望颖), W J Liu(柳文军), D L Zhu(朱德亮). Chin. Phys. B, 2019, 28(1): 018504.
[7] Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET
Wei-Wei Yan(闫薇薇), Lin-Chun Gao(高林春), Xiao-Jing Li(李晓静), Fa-Zhan Zhao(赵发展), Chuan-Bin Zeng(曾传滨), Jia-Jun Luo(罗家俊), Zheng-Sheng Han(韩郑生). Chin. Phys. B, 2017, 26(9): 098505.
[8] Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate
Lu Zhang(张璐), Hai-Yang Hong(洪海洋), Yi-Sen Wang(王一森), Cheng Li(李成), Guang-Yang Lin(林光杨), Song-Yan Chen(陈松岩), Wei Huang(黄巍), Jian-Yuan Wang(汪建元). Chin. Phys. B, 2017, 26(11): 116802.
[9] Convenient synthesis of stable silver quantum dots with enhanced photoluminescence emission by laser fragmentation
Shuang Li(李爽), Ming Chen(陈明). Chin. Phys. B, 2016, 25(4): 046103.
[10] Plasma induced by pulsed laser and fabrication of silicon nanostructures
Hang Wei-Qi, Dong Tai-Ge, Wang Gang, Liu Shi-Rong, Huang Zhong-Mei, Miao Xin-Jian, Lv Quan, Qin Chao-Jian. Chin. Phys. B, 2015, 24(8): 084205.
[11] Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up
Chen Rui, Han Jian-Wei, Zheng Han-Sheng, Yu Yong-Tao, Shangguan Shi-Peng, Feng Guo-Qiang, Ma Ying-Qi. Chin. Phys. B, 2015, 24(4): 046103.
[12] Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model
Rong Xi-Ming, Chen Jun, Li Jing-Tian, Zhuang Jun, Ning Xi-Jing. Chin. Phys. B, 2015, 24(12): 128706.
[13] Yb-doped passively mode-locked fiber laser with Bi2Te3-deposited
Li Lu, Yan Pei-Guang, Wang Yong-Gang, Duan Li-Na, Sun Hang, Si Jin-Hai. Chin. Phys. B, 2015, 24(12): 124204.
[14] Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET
Bi Jin-Shun, Zeng Chuan-Bin, Gao Lin-Chun, Liu Gang, Luo Jia-Jun, Han Zheng-Sheng. Chin. Phys. B, 2014, 23(8): 088505.
[15] Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation
Yan Shao-An, Tang Ming-Hua, Zhao Wen, Guo Hong-Xia, Zhang Wan-Li, Xu Xin-Yu, Wang Xu-Dong, Ding Hao, Chen Jian-Wei, Li Zheng, Zhou Yi-Chun. Chin. Phys. B, 2014, 23(4): 046104.
No Suggested Reading articles found!