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Chin. Phys. B, 2012, Vol. 21(1): 016104    DOI: 10.1088/1674-1056/21/1/016104
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

Chen Shu-Ming, Chen Jian-Jun
School of Computer Science, National University of Defense Technology, Changsha 410073, China
Abstract  A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.
Keywords:  charge sharing collection      single event transient      parasitic bipolar amplification effect      temperature dependence     
Received:  29 July 2011      Published:  20 January 2012
PACS:  61.80.Jh (Ion radiation effects)  
  85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004).

Cite this article: 

Chen Shu-Ming, Chen Jian-Jun Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain 2012 Chin. Phys. B 21 016104

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