Numerical analysis of In0.53Ga0.47As/InP single photon avalanche diodes

doi:10.1088/1674-1056/20/2/028502

Abstract A rigorous theoretical model for In_0.53Ga_0.47As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition. In the model, low field impact ionizations in charge and absorption layers are allowed, while avalanche breakdown can occur only in the multiplication layer. The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition. When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value, generation–recombination in the absorption layer is the dominative mechanism; otherwise band-to-band tunneling in the multiplication layer dominates the dark counts. The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency. However, when the multiplication layer width exceeds 1 μm, the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes.

Keywords: single photon avalanche diodes gate-mode single photon quantum efficiency dark count probability

Received: 30 June 2010
Revised: 19 August 2010
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	85.60.Gz	(Photodetectors (including infrared and CCD detectors))

Fund: Project supported by the National Basic Research Program of China (Grant Nos. G2001039302 and 007CB307001), and the Guangdong Provincial Key Technology Research and Development Program, China (Grant No. 2007B010400009).

Cite this article:

Zhou Peng(周鹏), Li Chun-Fei(李淳飞), Liao Chang-Jun(廖常俊), Wei Zheng-Jun(魏正军), and Yuan Shu-Qiong(袁书琼) Numerical analysis of In_0.53Ga_0.47As/InP single photon avalanche diodes 2011 Chin. Phys. B 20 028502

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Numerical analysis of In0.53Ga0.47As/InP single photon avalanche diodes

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Numerical analysis of In_0.53Ga_0.47As/InP single photon avalanche diodes