Electronic and luminescent properties of Cr-doped cadmium sulfide nanowires

doi:10.1088/1009-1963/15/4/018

Abstract

Abstract Cr-doped CdS nanowires were synthesized in large scale through thermal co-evaporation of CdS and metal Cr powders. General morphology, detailed microstructure and optical properties were characterized using various techniques. Devices consisting of individual Cr-doped CdS nanowire were fabricated and they exhibited remarkable rectifying characteristics. I-V curves of individual Cr-doped CdS nanowire devices demonstrate that the present nanowires are n-type doped and have high conductivity (10.96 $\Omega$ ^-1cm^-1, indicating great potential applications in nanoscale electronic and optoelectronic devices.

Keywords: CdS nanowires electrical properties luminescent properties

Received: 08 December 2005
Revised: 30 December 2005
Accepted manuscript online:

PACS:	81.07.-b	(Nanoscale materials and structures: fabrication and characterization)
	61.46.-w	(Structure of nanoscale materials)
	68.37.Hk	(Scanning electron microscopy (SEM) (including EBIC))
	72.80.Ey	(III-V and II-VI semiconductors)
	78.55.Et	(II-VI semiconductors)
	78.67.-n	(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
	85.35.-p	(Nanoelectronic devices)

Fund: Project supported by the key project of Zhejiang Provincial Natural Science Foundation (Grant No Z605131) and the National Natural Science Foundation of China (Grant No 60571029). Tang Wei-Hua was supported by the 100-outstanding Talents Project of Chinese Academy of Sciences and the Creative Research Group of National Natural Science Foundation of China (Grant No 60321001).

Cite this article:

Tang Wei-Hua (唐为华), Fu Xiu-Li (符秀丽), Zhang Zhi-Yong (张志勇), Li Ling-Hong (李玲红) Electronic and luminescent properties of Cr-doped cadmium sulfide nanowires 2006 Chinese Physics 15 773

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Electronic and luminescent properties of Cr-doped cadmium sulfide nanowires

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