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Other articles related with "total ionizing dose"：
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68502 |
Rongxing Cao(曹荣幸), Kejia Wang(汪柯佳), Yang Meng(孟洋), Linhuan Li(李林欢), Lin Zhao(赵琳), Dan Han(韩丹), Yang Liu(刘洋), Shu Zheng(郑澍), Hongxia Li(李红霞), Yuqi Jiang(蒋煜琪), Xianghua Zeng(曾祥华), and Yuxiong Xue(薛玉雄) |
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Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs |
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Chin. Phys. B
2023 Vol.32 (6): 68502-068502
[Abstract]
(210)
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[PDF 1436 KB]
(95)
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18506 |
Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢) |
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Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices |
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Chin. Phys. B
2023 Vol.32 (1): 18506-018506
[Abstract]
(411)
[HTML 1 KB]
[PDF 683 KB]
(165)
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128501 |
Xin Xie(解鑫), Da-Wei Bi(毕大伟), Zhi-Yuan Hu(胡志远), Hui-Long Zhu(朱慧龙), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌) |
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Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET |
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Chin. Phys. B
2018 Vol.27 (12): 128501-128501
[Abstract]
(645)
[HTML 1 KB]
[PDF 1013 KB]
(150)
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108501 |
Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥) |
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Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2018 Vol.27 (10): 108501-108501
[Abstract]
(633)
[HTML 1 KB]
[PDF 1529 KB]
(186)
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86103 |
Ya-Nan Yin(殷亚楠), Jie Liu(刘杰), Qing-Gang Ji(姬庆刚), Pei-Xiong Zhao(赵培雄), Tian-Qi Liu(刘天奇), Bing Ye(叶兵), Jie Luo(罗捷), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东) |
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Influences of total ionizing dose on single event effect sensitivity in floating gate cells |
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Chin. Phys. B
2018 Vol.27 (8): 86103-086103
[Abstract]
(565)
[HTML 1 KB]
[PDF 1134 KB]
(207)
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48503 |
Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌) |
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Research on the radiation hardened SOI devices with single-step Si ion implantation |
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Chin. Phys. B
2018 Vol.27 (4): 48503-048503
[Abstract]
(938)
[HTML 1 KB]
[PDF 1624 KB]
(285)
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96103 |
Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展) |
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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin |
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Chin. Phys. B
2017 Vol.26 (9): 96103-096103
[Abstract]
(697)
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[PDF 432 KB]
(306)
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87501 |
Yan Cui(崔岩), Ling Yang(杨玲), Teng Gao(高腾), Bo Li(李博), Jia-Jun Luo(罗家俊) |
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Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices |
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Chin. Phys. B
2017 Vol.26 (8): 87501-087501
[Abstract]
(602)
[HTML 1 KB]
[PDF 1555 KB]
(238)
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36103 |
Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情) |
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Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs |
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Chin. Phys. B
2017 Vol.26 (3): 36103-036103
[Abstract]
(719)
[HTML 1 KB]
[PDF 721 KB]
(422)
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96110 |
Lili Ding(丁李利), Simone Gerardin, Marta Bagatin, Dario Bisello, Serena Mattiazzo, Alessandro Paccagnella |
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Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors |
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Chin. Phys. B
2016 Vol.25 (9): 96110-096110
[Abstract]
(817)
[HTML 1 KB]
[PDF 251 KB]
(327)
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90702 |
Peng Chao (彭超), Hu Zhi-Yuan (胡志远), Ning Bing-Xu (宁冰旭), Huang Hui-Xiang (黄辉祥), Fan Shuang (樊双), Zhang Zheng-Xuan (张正选), Bi Da-Wei (毕大炜), En Yun-Fei (恩云飞) |
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Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs |
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Chin. Phys. B
2014 Vol.23 (9): 90702-090702
[Abstract]
(567)
[HTML 1 KB]
[PDF 531 KB]
(1027)
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70701 |
Liu Zhang-Li(刘张李), Hu Zhi-Yuan(胡志远), Zhang Zheng-Xuan(张正选), Shao Hua(邵华), Chen Ming(陈明), Bi Da-Wei(毕大炜), Ning Bing-Xu(宁冰旭), and Zou Shi-Chang(邹世昌) |
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Bias dependence of a deep submicron NMOSFET response to total dose irradiation |
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Chin. Phys. B
2011 Vol.20 (7): 70701-070701
[Abstract]
(1381)
[HTML 1 KB]
[PDF 1358 KB]
(975)
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120703 |
Liu Zhang-Li(刘张李), Hu Zhi-Yuan(胡志远), Zhang Zheng-Xuan(张正选), Shao Hua(邵华), Chen Ming(陈明), Bi Da-Wei(毕大炜), Ning Bing-Xu(宁冰旭), and Zou Shi-Chang(邹世昌) |
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Total ionizing dose effect in an input/output device for flash memory |
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Chin. Phys. B
2011 Vol.20 (12): 120703-120703
[Abstract]
(1627)
[HTML 1 KB]
[PDF 303 KB]
(754)
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114220 |
Chen Jian-Jun(陈建军), Chen Shu-Ming(陈书明), Liang Bin(梁斌), He Yi-Bai(何益百), Chi Ya-Qing(池雅庆), and Deng Ke-Feng(邓科峰) |
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Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs |
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Chin. Phys. B
2011 Vol.20 (11): 114220-114220
[Abstract]
(1293)
[HTML 0 KB]
[PDF 3380 KB]
(733)
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66104 |
Jin Xiao-Ming(金晓明), Fan Ru-Yu(范如玉), Chen Wei(陈伟),Lin Dong-Sheng(林东生), Yang Shan-Chao(杨善潮), Bai Xiao-Yan(白小燕), Liu Yan(刘岩),Guo Xiao-Qiang(郭晓强), and Wang Gui-Zhen(王桂珍) |
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Synergistic effects of neutron and gamma ray irradiation of commercial CHMOS microcontroller |
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Chin. Phys. B
2010 Vol.19 (6): 66104-066104
[Abstract]
(1823)
[HTML 1 KB]
[PDF 2464 KB]
(1032)
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2773 |
He Chao-Hui(贺朝会) and Li Yong-Hong(李永宏) |
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Experimental study on radiation effects in floating gate read-only-memories and static random access memories |
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Chin. Phys. B
2007 Vol.16 (9): 2773-2778
[Abstract]
(1400)
[HTML 1 KB]
[PDF 686 KB]
(556)
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