Influences of total ionizing dose on single event effect sensitivity in floating gate cells

doi:10.1088/1674-1056/27/8/086103

Abstract The influences of total ionizing dose (TID) on the single event effect (SEE) sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper. The increase in the cross section of heavy-ion single event upset (SEU) in memories that have ever been exposed to TID is observed, which is attributed to the combination of the threshold voltage shifts induced by γ-rays and heavy ions. Retention errors in floating gate (FG) cells after heavy ion irradiation are observed. Moreover, the cross section of retention error increases if the memory has ever been exposed to TID. This effect is more evident at a low linear energy transfer (LET) value. The underlying mechanism is identified as the combination of the defects induced by γ-rays and heavy ions, which increases the possibility to constitute a multi-trap assisted tunneling (m-TAT) path across the tunnel oxide.

Keywords: flash memories heavy ions synergistic effect total ionizing dose

Received: 26 February 2018
Revised: 04 May 2018
Accepted manuscript online:

PACS:	61.82.Fk	(Semiconductors)
	61.80.Jh	(Ion radiation effects)
	61.80.Ed	(γ-ray effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11690041, 11675233, U1532261, and 11505243).

Corresponding Authors: Jie Liu
E-mail: j.liu@impcas.ac.cn

Cite this article:

Ya-Nan Yin(殷亚楠), Jie Liu(刘杰), Qing-Gang Ji(姬庆刚), Pei-Xiong Zhao(赵培雄), Tian-Qi Liu(刘天奇), Bing Ye(叶兵), Jie Luo(罗捷), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东) Influences of total ionizing dose on single event effect sensitivity in floating gate cells 2018 Chin. Phys. B 27 086103

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Influences of total ionizing dose on single event effect sensitivity in floating gate cells

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