Synergistic effects of neutron and gamma ray irradiation of commercial CHMOS microcontroller

doi:10.1088/1674-1056/19/6/066104

Abstract This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20, which is a 16-bit high performance member of the MCS96 microcontroller family. The electrical and functional tests were made in three irradiation environments: neutron, gamma rays, combined irradiation of neutron and gamma rays. The experimental results show that the neutron irradiation can affect the total ionizing dose behaviour. Compared with the single radiation environment, the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation. This phenomenon may cause a significant hardness assurance problem.

Keywords: total ionizing dose neutron irradiation synergistic effect microcontroller

Received: 08 August 2009
Accepted manuscript online:

PACS:	84.30.Sk	(Pulse and digital circuits)
	85.30.Tv	(Field effect devices)
	61.80.Hg	(Neutron radiation effects)
	61.80.Ed	(γ-ray effects)

Cite this article:

Jin Xiao-Ming(金晓明), Fan Ru-Yu(范如玉), Chen Wei(陈伟),Lin Dong-Sheng(林东生), Yang Shan-Chao(杨善潮), Bai Xiao-Yan(白小燕), Liu Yan(刘岩),Guo Xiao-Qiang(郭晓强), and Wang Gui-Zhen(王桂珍) Synergistic effects of neutron and gamma ray irradiation of commercial CHMOS microcontroller 2010 Chin. Phys. B 19 066104

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Synergistic effects of neutron and gamma ray irradiation of commercial CHMOS microcontroller

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