Advancing III-phosphide red light-emitting diode performance through ternary and graded ternary electron blocking layer

doi:10.1088/1674-1056/ae0639

Abstract Gallium indium phosphide (GaInP)/aluminum gallium indium phosphide (AlGaInP) red-emitting active region has been numerically employed and investigated in III-V light-emitting diodes (LEDs) in this work. We have employed ternary aluminum gallium phosphide (AlGaP) electron blocking layer (EBL) and graded AlGaP EBL (or GEBL) separately in the red-emitting LED. According to the simulation results, improvements in internal quantum efficiency (IQE), radiative recombination rate ($R_{\rm rad})$, and carrier concentrations have been observed. Up to 9% decrease in efficiency droop is observed in red-emitting LEDs with ternary EBLs. Good carrier confinement has resulted in high $R_{\rm rad}$ and, thus, increased optical output. The proposed EBLs may, thus, be adopted due to their high optical output in red-emitting LEDs, particularly for high current applications.

Keywords: III-phosphide electron blocking layer efficiency red emission light-emitting diode radiative recombination

Received: 11 July 2025
Revised: 09 September 2025
Accepted manuscript online: 12 September 2025

PACS:	42.60.Lh	(Efficiency, stability, gain, and other operational parameters)
	71.55.Eq	(III-V semiconductors)
	78.60.-b	(Other luminescence and radiative recombination)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)

Fund: The authors are obliged to Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan) for providing the needed resources for this research.

Corresponding Authors: Muhammad Usman
E-mail: usmanishfaq@yahoo.com

Cite this article:

Anum, Muhammad Usman, Usman Habib, and Shazma Ali Advancing III-phosphide red light-emitting diode performance through ternary and graded ternary electron blocking layer 2026 Chin. Phys. B 35 044205

[1] Vanderwater D, Tan I H, Hofler G, Defevere D and Kish F A 1997 Proc. IEEE 85 1752
[2] Tsao J Y, Crawford M H, Coltrin M E, Fischer A J, Koleske D D, Subramania G S, et al. 2014 Adv. Opt. Mater. 2 809
[3] Gessmann T and Schubert E 2004 J. Appl. Phys. 95 2203
[4] Vurgaftman I, Meyer J and Ram-Mohan L 2001 J. Appl. Phys. 89 5815
[5] Cheng W C, Huang S Y, Chen Y J, Wang C S, Lin H Y, Wu T M, et al. 2018 Sci. Rep. 8 911
[6] Guo X, Liu Q L, Tian H J, Guo C W, Li C, Hu A Q, et al. 2018 Chin. Phys. B 27 098502
[7] Yadav A, Titkov I E, Sokolovskii G S, Karpov S Y, Dudelev V V, Soboleva K K, et al. 2018 J. Appl. Phys. 124 013103
[8] Oh H S, Park S H, Kim Y J, Lee H J and Cho Y D 2013 Asia Commun. Photon. Conf. AF2K5
[9] Shim J I, Han D P, Kim H, Shin D S, Lin G B, Meyaard D S, et al. 2012 Appl. Phys. Lett. 100 111106
[10] Royo P, Stanley R P, Ilegems M, Streubel K P, Moser M and Gulden K H 2001 Proc. SPIE 4278 61
[11] Kish F A and Fletcher R M 1997 AlGaInP Light-Emitting Diodes, in Semiconductors and Semimetals, eds. Stringfellow G B and Craford M G, Chapter 5, Vol. 48 (Amsterdam: Elsevier) pp. 149-C3
[12] Altieri P, Jaeger A, Windisch R, Linder N, Stauss P, Oberschmid R, et al. 2005 J. Appl. Phys. 98 086101
[13] Cho J, Schubert E F and Kim J K 2013 Laser Photon. Rev. 7 408
[14] Lin X, Liu D, Lin G, Zhang Q, Gao N, Zhao D, et al. 2014 RSC Adv. 4 63143
[15] Streubel K, Linder N, Wirth R and Jaeger A 2002 IEEE J. Sel. Top. Quantum Electron. 8 321
[16] Su J Y,Wu M C, ChenWB and Su Y K 2003 IEEE Electron Dev. Lett. 24 159
[17] Park C, Park K, Jang S, Yu J and Lee Y 2010 Semicond. Sci. Technol. 25 085012
[18] Anum M, Usman M, Habib U and Ali S 2024 Phys. Scr. 99 0659
[19] Zhang A, Yao J, Xing Z, Wang F, Liou J J and Liu Y 2025 Opt. Eng. 64 027103
[20] Lee H, Lee D, Song Y, Lee Y and Yu J 2011 Solid-State Electron. 56 79
[21] Fedorova O A, Bulashevich K A and Karpov S Y 2021 Opt. Express 29 35792
[22] Oh C H, Shim J I and Shin D S 2019 Jpn. J. Appl. Phys. 58 SCCC08
[23] Zhang Y, Lu S, Liu B, Gao H, Zhou Y, FangW, et al. 2025 IEEE Trans. Electron Dev. 72 2769
[24] Wang Y, Wang B, Sasangka W A, Bao S, Zhang Y, Demir H V, et al. 2018 Photon. Res. 6 290
[25] Boyer J T, Lepkowski D L, Chmielewski D J and Grassman T J 2019 Sol. Energy Mater. Sol. Cells 202 110133
[26] Tremblay R, Burin J P, Rohel T, Gauthier J P, Almosni S, Quinci T, et al. 2017 J. Cryst. Growth 466 6
[27] Piskorski L, Sarzala R P and Nakwaski W 2007 Semicond. Sci. Technol. 22 593
[28] Wang C 2017 Epitaxy and Characterization of AlGaInP-Based LEDs on Si Substrates for Visible-Spectrum Light Emission (Singapore: Nanyang Technol. Univ., Sch. Electr. Electron. Eng.)
[29] Chang S J, Chang C, Su Y, Chang P, Wu Y, Huang K, et al. 1997 IEE Proc.-Optoelectron. 144 405
[30] Rabinovich O, Gostischev P, Sizov S, Orlova M, Didenko S, Osipov Y, et al. 2019 Proc. Manuf. 37 195
[31] Zhu D 2011 Investigating and Optimizing Carrier Transport, Carrier Distribution, and Efficiency Droop in GaN-Based Light-Emitting Diodes (Troy, NY: Rensselaer Polytech. Inst.)
[32] Piprek J 2007 Nitride Semiconductor Devices: Principles and Simulation (Hoboken, NJ: John Wiley & Sons)
[33] Chuang S and Chang C K 1996 Phys. Rev. B 54 2491
[34] Bulashevich K, Khokhlev O, Evstratov I Y and Karpov S Y 2012 Proc. SPIE 8278 82780F
[35] Sabathil M, Laubsch A and Linder N 2007 Proc. SPIE 6486 64860V
[36] Yadav A, Titkov I E, Sokolovskii G S, Karpov S Y, Dudelev V V, Soboleva K K, et al. 2016 Proc. SPIE 9768 97680M
[37] Peng D and Liu K 2021 J. Phys.: Conf. Ser. 1865 012003
[38] Wang G, Yi X, Zhan T and Huang Y 2019 The AlGaInP/AlGaAs Material System and Red/Yellow LED, in Light-Emitting Diodes: Materials, Processes, Devices and Applications, edd. Li J and Zhang G Q (Cham: Springer Int. Publ.) pp. 171-202
[39] Park J H, Lee J W, Kim D Y, Cho J, Schubert E F, Kim J, et al. 2016 J. Appl. Phys. 119 055705

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Advancing III-phosphide red light-emitting diode performance through ternary and graded ternary electron blocking layer

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