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Advancing III-phosphide red light-emitting diode performance through ternary and graded ternary electron blocking layer |
| Anum, Muhammad Usman†, Usman Habib, and Shazma Ali |
| Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Swabi, Khyber Pakhtunkhwa, Pakistan |
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Abstract Gallium indium phosphide (GaInP)/aluminum gallium indium phosphide (AlGaInP) red-emitting active region has been numerically employed and investigated in III-V light-emitting diodes (LEDs) in this work. We have employed ternary aluminum gallium phosphide (AlGaP) electron blocking layer (EBL) and graded AlGaP EBL (or GEBL) separately in the red-emitting LED. According to the simulation results, improvements in internal quantum efficiency (IQE), radiative recombination rate ($R_{\rm rad})$, and carrier concentrations have been observed. Up to 9% decrease in efficiency droop is observed in red-emitting LEDs with ternary EBLs. Good carrier confinement has resulted in high $R_{\rm rad}$ and, thus, increased optical output. The proposed EBLs may, thus, be adopted due to their high optical output in red-emitting LEDs, particularly for high current applications.
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Received: 11 July 2025
Revised: 09 September 2025
Accepted manuscript online: 12 September 2025
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PACS:
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42.60.Lh
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(Efficiency, stability, gain, and other operational parameters)
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71.55.Eq
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(III-V semiconductors)
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78.60.-b
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(Other luminescence and radiative recombination)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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| Fund: The authors are obliged to Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan) for providing the needed resources for this research. |
Corresponding Authors:
Muhammad Usman
E-mail: usmanishfaq@yahoo.com
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Cite this article:
Anum, Muhammad Usman, Usman Habib, and Shazma Ali Advancing III-phosphide red light-emitting diode performance through ternary and graded ternary electron blocking layer 2026 Chin. Phys. B 35 044205
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