Quantum thermoelectric diodes and transistors with squeezed reservoir engineering

doi:10.1088/1674-1056/ae2abb

Abstract This work investigates inelastic thermoelectric systems exhibiting tight relations among electronic charge, electronic heat, and photonic heat currents. By employing a double quantum dot setup interacting with a squeezed photon reservoir, we show that such architectures can operate as high-performance quantum thermoelectric diodes and transistors. Central to this capability is the role of quantum squeezing, which markedly enhances the rectification of both charge and heat currents. Moreover, we demonstrate that a photon-assisted inelastic transport mechanism sustains a thermal transistor effect even within the linear-response regime — a regime where conventional elastic devices typically fail to amplify heat currents. Notably, quantum squeezing further enhances the thermal gain, underscoring its utility in quantum heat control. These results not only deepen our understanding of nonequilibrium quantum thermoelectrics but also provide a viable pathway toward designing devices with tailored energy-conversion functionalities through quantum reservoir engineering.

Keywords: thermoelectrics quantum thermodynamics diode transistors

Received: 13 September 2025
Revised: 04 December 2025
Accepted manuscript online: 10 December 2025

PACS:	05.70.-a	(Thermodynamics)
	72.20.Pa	(Thermoelectric and thermomagnetic effects)
	85.30.-z	(Semiconductor devices)
	05.60.Gg	(Quantum transport)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12305050 and 52302298) and the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No. 23KJB140017).

Corresponding Authors: Zi Wang, Hongzhao Sun, Jincheng Lu
E-mail: wangzi@nus.edu.sg;sunhongzhao@usts.edu.cn;jinchenglu@usts.edu.cn

Cite this article:

Ziming Wang(王子明), Gaoyuan Chen(陈高远), Yongkang Liu(刘永康), Chenhui Yu(俞晨晖), Yue Wu(吴越), Zi Wang(王子), Hongzhao Sun(孙红照), and Jincheng Lu(陆金成) Quantum thermoelectric diodes and transistors with squeezed reservoir engineering 2026 Chin. Phys. B 35 040502

[1] Benenti G, Casati G, Saito K and Whitney R S 2017 Phys. Rep. 694 1
[2] Wang R, Wang C, Lu J and Jiang J H 2022 Adv. Phys. X 7 2082317
[3] Jiang J H, Entin-Wohlman O and Imry Y 2012 Phys. Rev. B 85 075412
[4] Jiang J H and Imry Y 2017 Phys. Rev. Appl. 7 064001
[5] Liu H, Wang C, Wang L Q and Ren J 2019 Phys. Rev. E 99 032114
[6] Lu J, Wang R, Wang C and Jiang J H 2023 Entropy 25 498
[7] Bu K, Singh U, Fei S M, Pati A K and Wu J 2017 Phys. Rev. Lett. 119 150405
[8] Camati P A, Santos J F G and Serra R M 2019 Phys. Rev. A 99 062103
[9] Engel G S, Calhoun T R, Read E L, Ahn T K, Mančal T, Cheng Y C, Blankenship R E and Fleming G R 2007 Nature 446 782
[10] Sánchez R, Gorini C and Fleury G 2021 Phys. Rev. B 104 115430
[11] Sánchez R, Splettstoesser J and Whitney R S 2019 Phys. Rev. Lett. 123 216801
[12] Roßnagel J, Abah O, Schmidt-Kaler F, Singer K and Lutz E 2014 Phys. Rev. Lett. 112 030602
[13] Klaers J, Faelt S, Imamoglu A and Togan E 2017 Phys. Rev. X 7 031044
[14] NiedenzuW, Mukherjee V, Ghosh A, Kofman A G and Kurizki G 2018 Nat. Commun. 9 165
[15] Xiao Y, Liu D, He J, Zhuang L, Liu W M, Yan L L and Wang J 2023 Phys. Rev. Res. 5 043185
[16] Lê T K, Lukin D M, Roques-Carmes C, Karnieli A, Lustig E, Guidry M A, Fan S and Vučković J 2024 arXiv:2412.15068 [quant-ph]
[17] Cao B, Han C, Hao X, Wang C and Lu J 2024 Chin. Phys. Lett. 41 077302
[18] Landi G T and Paternostro M 2021 Rev. Mod. Phys. 93 035008
[19] Bhandari B and Jordan A N 2022 Phys. Rev. Res. 4 033103
[20] Esposito M, Harbola U and Mukamel S 2009 Rev. Mod. Phys. 81 1665
[21] Landi G T, Kewming M J, Mitchison M T and Potts P P 2024 PRX Quantum 5 020201
[22] Agarwalla B K, Jiang J H and Segal D 2015 Phys. Rev. B 92 245418
[23] Lu J, Liu J, Jiang J H and Wang C 2025 Phys. Rev. B 111 245407
[24] Yamamoto K and Hatano N 2015 Phys. Rev. E 92 042165
[25] Lu J, Jiang J H and Imry Y 2021 Phys. Rev. B 103 085429
[26] Jiang J H, Kulkarni M, Segal D and Imry Y 2015 Phys. Rev. B 92 045309
[27] Lu J, Wang Z, Ren J, Wang C and Jiang J H 2024 Phys. Rev. B 109 125407
[28] Cao B, Han C, Hao X, Wang C and Lu J 2024 Chin. Phys. Lett. 41 077302
[29] Zhang L, Wang J S and Li B 2010 Phys. Rev. B 81 100301
[30] Ren J and Zhu J X 2013 Phys. Rev. B 88 094427
[31] Yang Y, Chen H, Wang H, Li N and Zhang L 2018 Phys. Rev. E 98 042131
[32] Zhang Y and Su S 2021 Physica A 584 126347
[33] Wang C, Xu D, Liu H and Gao X 2019 Phys. Rev. E 99 042102
[34] Díaz I and Sánchez R 2021 New J. Phys. 23 125006
[35] Tesser L, Bhandari B, Erdman P A, Paladino E, Fazio R and Taddei F 2022 New J. Phys. 24 035001
[36] Khandelwal S, Perarnau-Llobet M, Seah S, Brunner N and Haack G 2023 Phys. Rev. Res. 5 013129
[37] Lu J, Wang R, Ren J, Kulkarni M and Jiang J H 2019 Phys. Rev. B 99 035129
[38] Li B, Wang L and Casati G 2006 Appl. Phys. Lett. 88 143501
[39] Li N, Ren J, Wang L, Zhang G, Hänggi P and Li B 2012 Rev. Mod. Phys. 84 1045
[40] Lu J, Wang R, Wang C and Jiang J H 2020 Phys. Rev. B 102 125405
[41] Bergenfeldt C, Samuelsson P, Sothmann B, Flindt C and Büttiker M 2014 Phys. Rev. Lett. 112 076803
[42] Sánchez R, Thierschmann H and Molenkamp L W 2017 Phys. Rev. B 95 241401
[43] Yang Y, Zhao Y and Zhang L 2023 Appl. Phys. Lett. 122 232201
[44] Guo B Q, Liu T and Yu C S 2018 Phys. Rev. E 98 022118
[45] Wang C, Chen X M, Sun K W and Ren J 2018 Phys. Rev. A 97 052112

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[3]	Effects of different growth conditions on epitaxial growth of (001) Ga₂O₃ films by MOCVD Ke Qin(秦柯), Yun-Long He(何云龙), Zhan Wang(王湛), Jing Sun(孙静), Ying Zhou(周颖), Yang Liu(刘洋), Jin-Wei Liu(刘金炜), Zhuo-Wen Huang(黄卓文), Ji-Wei Jiang(江继伟), Zhu Jin(金竹), Hui Zhang(张辉), Xiao-Li Lu(陆小力), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2026, 35(4): 048201.
[4]	Effect of a deep virtual guard ring on performance of a miniaturized high-photosensitivity silicon single-photon avalanche diode Enle Zhou(周恩乐), Dajing Bian(卞大井), and Yue Xu(徐跃). Chin. Phys. B, 2026, 35(4): 048501.
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[1]	CHEN JIAN (陈健), YANG XIANG-LIN (杨祥林). CAPABILITY OF THE GUIDING-CENTRE SOLITON COMMUNICATION SYSTEM[J]. Acta Physica Sinica (Overseas Edition), 1993, 2(6): 430 -438 .
[2]	YI LIN (易林), XIAO YI (肖奕), YAO KAI-LUN (姚凯伦). CRITICAL TEMPERATURE FOR A MODEL QUASI-ONE-DIMENSIONAL DISORDERED SUPERCONDUCTOR[J]. Acta Physica Sinica (Overseas Edition), 1993, 2(6): 458 -463 .
[3]	DING DI-HUA (丁棣华), QIN YUE-LING (秦越岭), WANG REN-HUI (王仁卉), HU CHENG-ZHENG (胡承正), YANG WEN-GE (杨文革). GENERALIZATION OF ESHELBY'S METHOD TO THE ANISOTROPIC ELASTICITY THEORY OF DISLOCATIONS IN QUASICRYSTALS[J]. Acta Physica Sinica (Overseas Edition), 1995, 4(11): 816 -824 .
[4]	FU SI-ZU (傅思祖), GU YUAN (顾援), WU JIANG (吴江), WANG SHI-JI (王世绩). SHOCK COMPRESSIBILITIES OF Fe UP TO 0.8 TPa AND SiO₂ UP TO 0.4 TPa[J]. Acta Physica Sinica (Overseas Edition), 1995, 4(5): 350 -355 .
[5]	MA GUO-BIN (马国斌), YANG YING-HU (杨映虎), CHEN GUANG-HUA (陈光华). INVESTIGATION OF GROWTH CHARACTERISTICS OF MONOCRYSTALLINE C₆₀ FILMS IN HELIUM GAS ENVIRONMENT[J]. Acta Physica Sinica (Overseas Edition), 1997, 6(2): 125 -129 .
[6]	Wei Guang-hong (韦广红), Zi Jian (资剑), Zhang Kai-ming (张开明), Xie Xi-de (谢希德). LATTICE DYNAMICS OF WURTZITE SEMICONDUCTORS GaN AND AlN[J]. Acta Physica Sinica (Overseas Edition), 1998, 7(11): 841 -850 .
[7]	Liu Xiao-mei (刘晓梅), Yang Min (杨敏), Lǜ Zhe (吕喆), Pei Li (裴力), Liu Jiang (刘江), Su Wen-hui (苏文辉). A STUDY ON SYNTHESIS OF La_1-x Sr_xCrO₃ BY SOL-GEL AND THEIR ELECTRICAL PROPERTIES[J]. Acta Physica Sinica (Overseas Edition), 1999, 8(9): 690 -693 .
[8]	Tong Guo-ping (童国平). HYBRID ORBITALS OF CARBON ATOMS IN THE D_6hC₃₆ MOLECULE UNDER THE ROTATING ELLIPSOID MODEL[J]. Chinese Physics, 2000, 9(8): 572 -576 .
[9]	Liu Yu-yan (刘煜炎), Liu Xiao-yong (刘效庸), Liu Hong-ping (刘红平), Guo Yuan-qing (郭远清), Huang Guang-ming (黄光明), Lin Jie-li (林洁丽), Gao Hui (高晖), Duan Chuan-xi (段传喜). GLOBAL ANALYSIS OF SPECTRA OF THE PO₂ RADICAL IN THE GAS PHASE[J]. Chinese Physics, 2000, 9(9): 652 -655 .
[10]	Sun Lei (孙磊), Zhang Yu-mei (章豫梅), Feng Wei-guo (冯伟国). VARIATIONAL STUDY ON MISSING BOND-CHARGE REPULSION ON THE EXTENDED HUBBARD MODEL: EFFECTS ON POLYACETYLENE[J]. Chinese Physics, 2001, 10(5): 384 -389 .

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Quantum thermoelectric diodes and transistors with squeezed reservoir engineering

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