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Chin. Phys. B, 2025, Vol. 34(12): 128101    DOI: 10.1088/1674-1056/ae1817
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Artificial synapse based on Co3O4 nanosheets for high-accuracy pattern recognition

Ying Li(李颖)1, Xiaofan Zhou(周晓凡)1, Jiajun Guo(郭家俊)1,†, Tong Chen(陈通)2,3, Xiaohui Zhang(张晓辉)1, Xia Xiao(肖夏)1, Guangyu Wang(王光宇)1,‡, Mehran Khan Alam4, Qi Zhang(张琪)5, and Liqian Wu(武力乾)6,§
1 School of Physical Science and Information Technology, Liaocheng University, Liaocheng 252059, China;
2 School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
3 Institute of Advanced Semiconductors, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China;
4 Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan 250061, China;
5 School of Medical Information Engineering, Department of Physics, Jining Medical University, Jining 272067, China;
6 Wenzhou Institute of Hangzhou Dianzi University, Wenzhou 325038, China
Abstract  Two-dimensional (2D) metal oxides are promising candidates for constructing neuromorphic systems because of their intriguing physical properties, such as atomic thinness and ionic activity. In this work, Co$_{3}$O$_{4}$ nanosheets were synthesized using a solvothermal method and integrated into artificial synapses. Based on the synaptic plasticity of the Co$_{3}$O$_{4}$ nanosheet-based memristive device, an artificial neural network (ANN) was designed and tested. A recognition accuracy of approximately 96% was achieved for the Modified National Institute of Standards and Technology (MNIST) handwritten digit classification task using this ANN. These results highlight the potential of Co$_{3}$O$_{4}$ nanosheet-based artificial synapses and Al/Co$_{3}$O$_{4}$ nanosheet/ITO memristor devices as excellent material candidates for neuromorphic hardware.
Keywords:  artificial synapse      memristor      Co3O4 nanosheet      synaptic plasticity  
Received:  22 July 2025      Revised:  22 September 2025      Accepted manuscript online:  28 October 2025
PACS:  81.07. b  
  84.35.+i (Neural networks)  
  85.35. p  
  73.40.Rw (Metal-insulator-metal structures)  
Fund: This work was supported by the Natural Science Foundation of Shandong Province (Grant Nos. ZR2024MA019 and ZR2023QA106) and the “Pioneer” and “Leading Goose” R&D Program of Zhejiang (Grant No. 2023C01018).
Corresponding Authors:  Jiajun Guo, Guangyu Wang, Liqian Wu     E-mail:  guojiajun@lcu.edu.cn;wangguangyu@lcu.edu.cn;wulq@hdu.edu.cn

Cite this article: 

Ying Li(李颖), Xiaofan Zhou(周晓凡), Jiajun Guo(郭家俊), Tong Chen(陈通), Xiaohui Zhang(张晓辉), Xia Xiao(肖夏), Guangyu Wang(王光宇), Mehran Khan Alam, Qi Zhang(张琪), and Liqian Wu(武力乾) Artificial synapse based on Co3O4 nanosheets for high-accuracy pattern recognition 2025 Chin. Phys. B 34 128101

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