1 Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China; 2 Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 3 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101804, China; 4 Department of Electronic Engineering and Maynooth International Engineering College, Maynooth University, Maynooth, Co. Kildare, Ireland; 5 School of Integrated Circuits, Anhui University, Hefei 230601, China
Abstract The in-plane optical anisotropy (IPOA) of -plane InGaN/GaN quantum disks (Qdisks) in nanowires grown on MoS/Mo and Ti/Mo substrates is investigated using reflectance difference spectroscopy (RDS) at room temperature. A large IPOA related to defect or impurity states is observed. The IPOA of samples grown on MoS/Mo is approximately one order of magnitude larger than that of samples grown on Ti/Mo substrates. Numerical calculations based on the envelope function approximation have been performed to analyze the origin of the IPOA. It is found that the IPOA primarily results from the segregation of indium atoms in the InGaN/GaN Qdisks. This work highlights the significant influence of substrate materials on the IPOA of semiconductor heterostructures.
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 62074036, 61674038, and 11574302), Foreign Cooperation Project of Fujian Province (Grant No. 2023I0005), Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (Grant No. KF202108), the National Key Research and Development Program (Grant No. 2016YFB0402303), and the Foundation of Fujian Provincial Department of Industry and Information Technology of China (Grant No. 82318075).
Tingting Wei(韦婷婷), Jinling Yu(俞金玲), Zhu Diao, Zhaonan Li(李兆男), Shuying Cheng(程树英), Yunfeng Lai(赖云锋), Yonghai Chen(陈涌海), and Chao Zhao(赵超) In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy 2025 Chin. Phys. B 34 067302
[1] Wu J, Walukiewicz W, Yu K M, Ager J W, Haller E E, Lu H, Schaff W J, Saito Y and Nanishi Y 2002 Appl. Phys. Lett. 80 3967 [2] Janjua B, Ng T K, Zhao C, Oubei H M, Shen C, Prabaswara A, Alias M S, Alhamoud A A, Alatawi A A, Albadri A M 2016 Opt. Express 24 19228 [3] Almalawi D, Lopatin S and Edwards P R 2023 ACS Omega 8 46804 [4] Ahmed A, Yi G C and Park W I and Chung K 2024 J. Inf. Display 25 75 [5] Wang R, Cui Q, Zhu W, Niu Y, Liu Z, Zhang L, Wu X, Chen S and Song L 2022 Chin. Phys. B 31 096802 [6] Chen Y H, Ye X L, Wang J Z, Wang Z G and Yang Z 2002 Phys. Rev. B 66 248 [7] Yu J L, Chen Y H, Tang C G, Jiang C Y and Ye X L 2011 Nanoscale Res. Lett. 6 210 [8] Sundin E M, Das D, Kolluri K, Bhattacharya P, Ramana C V and Li C 2023 ACS Appl. Opt. Mater. 1 973 [9] Fan X, Shi J, Chen Y, Miao G, Jiang H and Song H 2024 Micromachines 15 1188 [10] Qu S D, Xu M S, Wang C X, Shi K J, Li R, Wei Y H, Xu X G and Ji Z W 2022 Chin. Phys. B 31 017801 [11] Zhao C, Ng T K, Tseng C C, Li J, Shi Y, Wei N, Zhang D, Consiglio G B, Prabaswara A, Alhamoud A, Albadri A M, Alyamani A Y, Zhang X, Li L J and Ooi B S 2017 RSC Adv. 7 26665 [12] Zhao C, Ng T K, Wei N, Prabaswara A, Alias M S, Janjua B, Shen C and Ooi B S 2016 Nano Lett. 16 1056 [13] Chen Y H, Ye X L, Xu B andWang Z G 2006 J. Appl. Phys. 99 096102 [14] Singh V K, Taya P, Jana D, Tyagi R, Raghavan S and Sharma T K 2019 Superlattices Microstruct. 134 106234 [15] Tange T, Matsukata T and Sannomiya T 2020 Appl. Phys. Express 13 062004 [16] Aggarwal T, Ganguly S and Saha D 2021 J. Phys. Chem. C 125 3535 [17] Made R I, Gao Y, Syaranamual G J, Sasangka W A, Zhang L, Nguyen X S, Tay Y Y, Herrin J S, Thompson C V and Gan C L 2017 Microelectron. Reliab. 76-77 561 [18] Ye X L, Wang J Z, Wang Z G, Yang Z and Chen Y H 2001 Phys. Rev. B 63 115317 [19] Kuykendall T, Ulrich P, Aloni S and Yang P 2007 Nat. Mater. 6 951 [20] Ryu H Y, Jeon K S, Kang M G, Yuh H K, Choi Y H and Lee J S 2017 Sci. Rep. 7 44814 [21] Robichaud L and Krich J J 2021 J. Appl. Phys. 129 224301 [22] Krebs O and Voisin P 1996 Phys. Rev. Lett. 77 1829 [23] Walther T, Amari H, Ross I M, Wang T and Cullis A G 2013 J. Mater. Sci. 48 2883
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