Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

doi:10.1088/1674-1056/ad8624

Abstract Multidimensional influences of indium composition in barrier layers on GaN-based blue laser diodes (LDs) are discussed from both material quality and device physics perspectives. LDs with higher indium content in the barriers demonstrate a notably lower threshold current and shorter lasing wavelength compared to those with lower indium content. Our experiments reveal that higher indium content in the barrier layers can partially reduce indium composition in the quantum wells, a novel discovery. Employing higher indium content barrier layers leads to improved luminescence properties of the MQW region. Detailed analysis reveals that this improvement can be attributed to better homogeneity in the indium composition of the well layers along the epitaxy direction. InGaN barrier layers suppress the lattice mismatch between barrier and well layers, thus mitigating the indium content pulling effect in the well layers. In supplement to experimental analysis, theoretical computations are performed, showing that InGaN barrier structures can effectively enhance carrier recombination efficiency and optical confinement of LD structure, thus improving the output efficiency of GaN-based blue LDs. Combining these theoretical insights with our experimental data, we propose that higher indium content barriers effectively enhance carrier recombination efficiency and indium content homogeneity in quantum well layers, thereby improving the output performance of GaN-based blue LDs.

Keywords: laser diodes MOCVD quantum wells III-V semiconductors

Received: 23 August 2024
Revised: 30 September 2024
Accepted manuscript online: 12 October 2024

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.67.De	(Quantum wells)
	42.55.Px	(Semiconductor lasers; laser diodes)
	81.05.Ea	(III-V semiconductors)

Fund: Project supported by Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2023124), the National Key Research and Development Program of China (Grant No. 2022YFB3608100), Key Research and Development Program of Jiangsu Province (Grant No. BE2021008-1), Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering (Grant No. 2022SXTD016), the National Natural Science Foundation of China (Grant Nos. 62274157, 61904172, 62127807, 62234011, 61974162, 62034008, 62074142, 62074140, and 62250038), and Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB43030101).

Corresponding Authors: Degang Zhao, Feng Liang
E-mail: dgzhao@semi.ac.cn;liangfeng13@semi.ac.cn

Cite this article:

Zhenyu Chen(陈振宇), Degang Zhao(赵德刚), Feng Liang(梁锋), Zongshun Liu(刘宗顺), Jing Yang(杨静), and Ping Chen(陈平) Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes 2024 Chin. Phys. B 33 128102

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Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

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