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Wafer-scale 30° twisted bilayer graphene epitaxially grown on Cu0.75Ni0.25 (111) |
| Peng-Cheng Ma(马鹏程)1,2,†, Ao Zhang(张翱)3,4,†, Hong-Run Zhen(甄洪润)1,2, Zhi-Cheng Jiang(江志诚)3,4, Yi-Chen Yang(杨逸尘)3,4, Jian-Yang Ding(丁建阳)3,4, Zheng-Tai Liu(刘正太)3,4, Ji-Shan Liu(刘吉山)3,4, Da-Wei Shen(沈大伟)5, Qing-Kai Yu(于庆凯)3,4, Feng Liu(刘丰)1,2,‡, Xue-Fu Zhang(张学富)3,4,§, and Zhong-Hao Liu(刘中灏)1,2,¶ |
1 School of Physical Science and Technology, Ningbo University, Ningbo 315211, China;
2 Institute of High-Pressure Physics, Ningbo University, Ningbo 315211, China;
3 National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
4 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
5 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China |
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Abstract Twisted bilayer graphene (TBG) has been extensively studied because of its novel physical properties and potential application in electronic devices. Here we report the synthesis and characterization of 30$^\circ$ TBG naturally grown on Cu$_{0.75}$Ni$_{0.25}$ (111) film and investigate the electronic structure by angle-resolved photoemission spectroscopy. Compared with other substrates, our TBG with a wafer scale is acquired with a shorter growth time. The Fermi velocity and energy gap of Dirac cones of TBG are comparable with those of a monolayer on Cu$_{0.85}$Ni$_{0.15}$ (111). The signature of moiré lattices has not been observed in either the low-energy electron diffraction patterns or the Fermi surface map within experimental resolution, possibly due to different Cu and Ni contents in the substrates enhancing the different couplings between the substrate and the first/second layers and hindering the formation of a quasiperiodic structure.
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Received: 28 November 2023
Revised: 03 February 2024
Accepted manuscript online: 26 February 2024
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PACS:
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61.48.Gh
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(Structure of graphene)
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68.65.Pq
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(Graphene films)
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71.28.+d
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(Narrow-band systems; intermediate-valence solids)
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81.05.ue
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(Graphene)
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| Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2022YFB3608000 and 2022YFA1204900), the National Natural Science Foundation of China (Grant Nos. 12222413 and 12074205), the Natural Science Foundation of Shanghai (Grant Nos. 23ZR1482200 and 22ZR1473300), the Natural Science Foundation of Zhejiang Province (Grant No. LQ21A040004), and the funding of Ningbo University (Grant No. LJ2024003). |
Corresponding Authors:
Feng Liu, Xue-Fu Zhang, Zhong-Hao Liu
E-mail: liufeng@nbu.edu.cn;zhangxuefu@mail.sim.ac.cn;liuzhonghao@nbu.edu.cn
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Cite this article:
Peng-Cheng Ma(马鹏程), Ao Zhang(张翱), Hong-Run Zhen(甄洪润), Zhi-Cheng Jiang(江志诚), Yi-Chen Yang(杨逸尘), Jian-Yang Ding(丁建阳), Zheng-Tai Liu(刘正太), Ji-Shan Liu(刘吉山), Da-Wei Shen(沈大伟), Qing-Kai Yu(于庆凯), Feng Liu(刘丰), Xue-Fu Zhang(张学富), and Zhong-Hao Liu(刘中灏) Wafer-scale 30° twisted bilayer graphene epitaxially grown on Cu0.75Ni0.25 (111) 2024 Chin. Phys. B 33 066101
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