Please wait a minute...
Chin. Phys. B, 2024, Vol. 33(3): 037801    DOI: 10.1088/1674-1056/acf27f
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy

Wei Huang(黄威)1,2,3,†, Jinling Yu(俞金玲)4,†, Yu Liu(刘雨)1,‡, Yan Peng(彭燕)5, Lijun Wang(王利军)1, Ping Liang(梁平)1, Tangsheng Chen(陈堂胜)3, Xiangang Xu(徐现刚)5, Fengqi Liu(刘峰奇)1, and Yonghai Chen(陈涌海)1,2,§
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 National Key Laboratory of Solid-state Microwave Devices and Circuits, Nanjing Electronic Devices Institute, Nanjing 210016, China;
4 Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;
5 State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
Abstract  Optical reflection anisotropy microscopy mappings of micropipe defects on the surface of a 4H-SiC single crystal are studied by the scanning anisotropy microscopy (SAM) system. The reflection anisotropy (RA) image with a 'butterfly pattern' is obtained around the micropipes by SAM. The RA image of the edge dislocations is theoretically simulated based on dislocation theory and the photoelastic principle. By comparing with the Raman spectrum, it is verified that the micropipes consist of edge dislocations. The different patterns of the RA images are due to the different orientations of the Burgers vectors. Besides, the strain distribution of the micropipes is also deduced. One can identify the dislocation type, the direction of the Burgers vector and the optical anisotropy from the RA image by using SAM. Therefore, SAM is an ideal tool to measure the optical anisotropy induced by the strain field around a defect.
Keywords:  scanning anisotropy microscopy      SiC      reflection anisotropy      edge dislocation  
Received:  15 June 2023      Revised:  06 August 2023      Accepted manuscript online:  22 August 2023
PACS:  78.20.H- (Piezo-, elasto-optical effects)  
  78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))  
  33.20.Fb (Raman and Rayleigh spectra (including optical scattering) ?)  
  68.35.Gy (Mechanical properties; surface strains)  
Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFE0204001, 2018YFA0209103, 2016YFB0400101, and 2016YFB0402303), the National Natural Science Foundation of China (Grant Nos. 61627822, 61704121, 61991430, and 62074036), and Postdoctoral Research Program of Jiangsu Province (Grant No. 2021K599C).
Corresponding Authors:  Yu Liu, Yonghai Chen     E-mail:  liuyu@semi.ac.cn;yhchen@semi.ac.cn

Cite this article: 

Wei Huang(黄威), Jinling Yu(俞金玲), Yu Liu(刘雨), Yan Peng(彭燕),Lijun Wang(王利军), Ping Liang(梁平), Tangsheng Chen(陈堂胜), Xiangang Xu(徐现刚), Fengqi Liu(刘峰奇), and Yonghai Chen(陈涌海) Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy 2024 Chin. Phys. B 33 037801

[1] Baierhofer D, Thomas B, Staiger F, Marchetti B, Foerster C and Erlbacher T 2022 Materials Science in Semiconductor Processing 140 106414
[2] Wang H, Yu J, Hu G, Peng Y, Xie X, Hu X, Chen X and Xu X 2021 Materials 14 5890
[3] Augustine G, Balakrishna V and Brandt C 2000 J. Cryst. Growth 211 339
[4] Cooper J A 1997 Physica Status Solidi a-Applied Research 162 305
[5] Jenny J, Skowronski M, Mitchel W, Hobgood H, Glass R, Augustine G and Hopkins R 1995 J. Appl. Phys. 78 3839
[6] Siergiej R, Clarke R, Sriram S, Agarwal A, Bojko R, Morse A, Balakrishna V, MacMillan M, Burk A and Brandt C 1999 Mat. Sci. Eng. B-Solid 61 9
[7] Zolper J 2005 Emerging silicon carbide power electronics components APEC 2005: Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, VOLS 1-3 Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (IEEE; Power Sources Manufacturers Assoc; IEEE PELS; IEEE Ind Applicat Soc) pp. 11-17
[8] Bhatnagar M, Mclarty P and Baliga B 1992 IEEE Electron Device Lett. 13 501
[9] Ning L, Hu X, Xu X, Chen X, Wang Y, Jiang S and Li J 2008 Journal of Applied Crystallography 41 939
[10] Dadgar A, Hums C, Diez A, Blaesing J and Krost A 2006 J. Cryst. Growth 297 279
[11] Wu Y F, Saxler A, Moore M, Smith R P, Sheppard S, Chavarkar PM, Wisleder T, Mishra U K and Parikh P 2004 IEEE Electron Device Letters 25 117
[12] Wang X and Yoshikawa A 2004 Molecular beam epitaxy growth of GaN, AlN and InN Progress in Crystal Growth and Characterization of Materials Vol. 48-49 pp. 42-103
[13] Frank F C 1951 Acta Crystallographica 4 497
[14] Presser V, Loges A and Nickel K G 2008 Philosophical Magazine 88 1639
[15] Vetter WM and Dudley M 2006 Philosophical Magazine 86 1209
[16] Ouisse T, Chaussende D and Auvray L 2010 Journal of Applied Crystallography 43 122
[17] Le Thi Mai H, Ouisse T and Chaussende D 2012 J. Cryst. Growth 354 202
[18] Hu X, Xu X, Li X, Jiang S, Li J, Wang L, Wang J and Jiang M 2006 J. Cryst. Growth 292 192
[19] Koopmans B, Santos P V and Cardona M 1998 Physica Status Solidi a-Applied Research 170 307
[20] Koopmans B, Richards B, Santos P, Eberl K and Cardona M 1996 Appl. Phys. Lett. 69 782
[21] Huang W, Liu Y, Zhu L, Zheng X, Li Y, Wu Q, Wang Y, Wang X and Chen Y 2016 Opt. Express 24 15059
[22] Chen Y H, Ye X L, Wang J Z, Wang Z G and Yang Z 2002 Phys. Rev. B 66 195321
[23] Aspnes D E 1985 Journal of Vacuum Science & Technology B 3 1498
[24] Chen Y H, Ye X L, Xu B, Wang Z G and Yang Z 2006 Appl. Phys. Lett. 89 051903
[25] Tang C G, Chen Y H, Xu B, Ye X L and Wang Z G 2009 J. Appl. Phys. 105 103108
[26] Zhang WF, Qin Z Y and Yang Z 2005 J. Appl. Phys. 97 074314
[27] Lastras-Martinez L F, del Pozo-Zamudio O, Herrera-Jasso R, Ulloa-Castillo N A, Balderas-Navarro R E, Ortega Gallegos J and Lastras-Martinez A 2012 Physica Status Solidi B-Basic Solid State Physics 249 1119
[28] Lastras-Martinez L F, Castro-Garcia R, Balderas-Navarro R E and Lastras-Martinez A 2009 Appl. Opt. 48 5713
[29] Gao H S, Liu Y, Zhang H Y, Wu S J, Jiang C Y, Yu J L, Zhu L P, Li Y, Huang W and Chen Y H 2014 Appl. Phys. Lett. 104 053106
[30] Lu L, Gao Z Y, Shen B, Xu F J, Huang S, Miao Z L, Hao Y, Yang Z J, Zhang G Y, Zhang X P, Xu J and Yu D P 2008 J. Appl. Phys. 104 123525
[31] Lu L, Gao Z Y, Shen B, Xu F J, Huang S, Miao Z L, Hao Y, Yang Z J, Zhang G Y, Zhang X P, Xu J and Yu D P 2008 J. Appl. Phys. 104 123525
[32] Ge C Z, Hsu C C and Ming N B 1994 J. Cryst. Growth 142 133
[33] Shin Y J, Kim W J, Kim H Y and Bahng W 2013 Dislocation analysis of 4H-and 6H-SiC single crystals using micro-Raman spectroscopy (Materials Science Forum vol. 740-742) pp. 481-484
[34] Matsuoka D, Yamamoto H, Nishino S, Hasuike N, Kisoda K and Harima H 2009 Raman Scattering Study of Stress Distribution around Dislocation in SiC (Materials Science Forum vol. 600-603) pp. 337-340
[35] Gmeinwieser N and Schwarz U T 2007 Phys. Rev. B 75 245213
[1] Analysis of learnability of a novel hybrid quantum-classical convolutional neural network in image classification
Tao Cheng(程涛), Run-Sheng Zhao(赵润盛), Shuang Wang(王爽), Rui Wang(王睿), and Hong-Yang Ma(马鸿洋). Chin. Phys. B, 2024, 33(4): 040303.
[2] Ultrafast photoemission electron microscopy: A multidimensional probe of nonequilibrium physics
Yanan Dai(戴亚南). Chin. Phys. B, 2024, 33(3): 038703.
[3] Experimental investigation of omnidirectional multiphysics bilayer invisibility cloak with anisotropic geometry
Huolei Feng(丰火雷), Xingwei Zhang(张兴伟), Limin Zhou(周利敏), Yuekai Zhang(张悦凯), and Yushan Ni(倪玉山). Chin. Phys. B, 2024, 33(3): 038102.
[4] A flexible ultra-broadband multi-layered absorber working at 2 GHz-40 GHz printed by resistive ink
Tao Wang(汪涛), Yu-Lun Yan(闫玉伦), Gong-Hua Chen(陈巩华), Ying Li(李迎), Jun Hu(胡俊), and Jian-Bo Mao(毛剑波). Chin. Phys. B, 2024, 33(2): 024101.
[5] MetaPINNs: Predicting soliton and rogue wave of nonlinear PDEs via the improved physics-informed neural networks based on meta-learned optimization
Yanan Guo(郭亚楠), Xiaoqun Cao(曹小群), Junqiang Song(宋君强), and Hongze Leng(冷洪泽). Chin. Phys. B, 2024, 33(2): 020203.
[6] Analysis of radiation diffusion of COVID-19 driven by social attributes
Fuzhong Nian(年福忠), Xiaochen Yang(杨晓晨), and Yayong Shi(师亚勇). Chin. Phys. B, 2024, 33(1): 018904.
[7] High-order harmonic generation of ZnO crystals in chirped and static electric fields
Ling-Yu Zhang(张玲玉), Yong-Lin He(何永林), Zhuo-Xuan Xie(谢卓璇), Fang-Yan Gao(高芳艳), Qing-Yun Xu(徐清芸), Xin-Lei Ge(葛鑫磊), Xiang-Yi Luo(罗香怡), and Jing Guo(郭静). Chin. Phys. B, 2024, 33(1): 013102.
[8] Photophysics of metal-organic frameworks: A brief overview
Qingshuo Liu(刘晴硕), Junhong Yu(余俊宏), and Jianbo Hu(胡建波). Chin. Phys. B, 2024, 33(1): 017204.
[9] Hamiltonian system for the inhomogeneous plane elasticity of dodecagonal quasicrystal plates and its analytical solutions
Zhiqiang Sun(孙志强), Guolin Hou(侯国林), Yanfen Qiao(乔艳芬), and Jincun Liu (刘金存). Chin. Phys. B, 2024, 33(1): 016107.
[10] Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness
Jia-Hao Chen(陈嘉豪), Ying Wang(王颖), Xin-Xing Fei(费新星), Meng-Tian Bao(包梦恬), and Fei Cao(曹菲). Chin. Phys. B, 2023, 32(9): 098505.
[11] Saturation thickness of stacked SiO2 in atomic-layer-deposited Al2O3 gate on 4H-SiC
Zewei Shao(邵泽伟), Hongyi Xu(徐弘毅), Hengyu Wang(王珩宇), Na Ren(任娜), and Kuang Sheng(盛况). Chin. Phys. B, 2023, 32(8): 087106.
[12] ESR-PINNs: Physics-informed neural networks with expansion-shrinkage resampling selection strategies
Jianan Liu(刘佳楠), Qingzhi Hou(侯庆志), Jianguo Wei(魏建国), and Zewei Sun(孙泽玮). Chin. Phys. B, 2023, 32(7): 070702.
[13] Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation
Ruijun Zhang(张锐军), Rongdun Hong(洪荣墩), Jingrui Han(韩景瑞), Hungkit Ting(丁雄杰), Xiguang Li(李锡光), Jiafa Cai(蔡加法), Xiaping Chen(陈厦平), Deyi Fu(傅德颐), Dingqu Lin(林鼎渠), Mingkun Zhang(张明昆), Shaoxiong Wu(吴少雄),Yuning Zhang(张宇宁), Zhengyun Wu(吴正云), and Feng Zhang(张峰). Chin. Phys. B, 2023, 32(6): 067205.
[14] Morphological features and nanostructures generated during SiC graphitization process
Wen-Xia Kong(孔雯霞), Yong Duan(端勇), Jin-Zhe Zhang(章晋哲),Jian-Xin Wang(王剑心), and Qun Cai(蔡群). Chin. Phys. B, 2023, 32(6): 068103.
[15] Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs
Rongxing Cao(曹荣幸), Kejia Wang(汪柯佳), Yang Meng(孟洋), Linhuan Li(李林欢), Lin Zhao(赵琳), Dan Han(韩丹), Yang Liu(刘洋), Shu Zheng(郑澍), Hongxia Li(李红霞), Yuqi Jiang(蒋煜琪), Xianghua Zeng(曾祥华), and Yuxiong Xue(薛玉雄). Chin. Phys. B, 2023, 32(6): 068502.
No Suggested Reading articles found!