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Diamond growth in a high temperature and high pressure Fe-Ni-C-Si system: Effect of synthesis pressure |
| Yang Liu(刘杨)1, Zhiwen Wang(王志文)1, Bowei Li(李博维)1, Hongyu Zhao(赵洪宇)1, Shengxue Wang(王胜学)1, Liangchao Chen(陈良超)2,§, Hongan Ma(马红安)1,†, and Xiaopeng Jia(贾晓鹏)1,‡ |
1 State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China;
2 Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China |
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Abstract Pressure is one of the necessary conditions for diamond growth. Exploring the influence of pressure on growth changes in silicon-doped diamonds is of great value for the production of high-quality diamonds. This work reports the morphology, impurity content and crystal quality characteristics of silicon-doped diamond crystals synthesized under different pressures. Fourier transform infrared spectroscopy shows that with the increase of pressure, the nitrogen content in the C- center inside the diamond crystal decreases. X-ray photoelectron spectroscopy test results show the presence of silicon in the diamond crystals synthesized by adding silicon powder. Raman spectroscopy data shows that the increase in pressure in the Fe-Ni-C-Si system shifts the Raman peak of diamonds from 1331.18 cm-1 to 1331.25 cm-1, resulting in a decrease in internal stress in the crystal. The half-peak width decreased from 5.41 cm-1 to 5.26 cm-1, and the crystallinity of the silicon-doped diamond crystals improved, resulting in improved quality. This work provides valuable data that can provide a reference for the synthesis of high-quality silicon-doped diamonds.
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Received: 18 June 2023
Revised: 07 August 2023
Accepted manuscript online: 15 August 2023
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PACS:
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81.05.ug
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(Diamond)
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61.50.-f
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(Structure of bulk crystals)
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81.40.Vw
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(Pressure treatment)
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91.62.La
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(Carbon cycling, nitrogen cycling)
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| Fund: Project supported by the National Natural Science Foundation of China(Grant Nos.51872112 and 51772120). |
Corresponding Authors:
Liangchao Chen, Hongan Ma, Xiaopeng Jia
E-mail: chenlc@zzu.edu.cn;maha@jlu.edu.cn;jiaxp@jlu.edu.cn
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Cite this article:
Yang Liu(刘杨), Zhiwen Wang(王志文), Bowei Li(李博维), Hongyu Zhao(赵洪宇), Shengxue Wang(王胜学), Liangchao Chen(陈良超), Hongan Ma(马红安), and Xiaopeng Jia(贾晓鹏) Diamond growth in a high temperature and high pressure Fe-Ni-C-Si system: Effect of synthesis pressure 2023 Chin. Phys. B 32 128102
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