| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir20Mn80 |
| Danrong Xiong(熊丹荣)1,2, Yuhao Jiang(蒋宇昊)1, Daoqian Zhu(朱道乾)1, Ao Du(杜奥)1, Zongxia Guo(郭宗夏)1, Shiyang Lu(卢世阳)3, Chunxu Wang(王春旭)3, Qingtao Xia(夏清涛)3, Dapeng Zhu(朱大鹏)1,3,†, and Weisheng Zhao(赵巍胜)1,2,3,‡ |
1 Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China;
2 Hefei Innovation Research Institute, Beihang University, Hefei 230013, China;
3 Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China |
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Abstract Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect (AHE), magnetic spin Hall effect, and chiral anomaly. The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn$_{3}X$ family such as Mn$_{3}$Sn and Mn$_{3}$Ge. Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics, but also have great importance for driving the nontrivial topological properties towards practical applications. Here, we report remarkable AHE, anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir$_{20}$Mn$_{80}$ antiferromagnet, which is one of the most widely used antiferromagnetic materials in industrial spintronics. The ab initio calculations suggest that the Ir$_{4}$Mn$_{16}$ (IrMn$_{4}$) or Mn$_{3}$Ir nanocrystals hold nontrivial electronic band structures, which may contribute to the observed intriguing magnetotransport properties in the Ir$_{20}$Mn$_{80}$. Further, we demonstrate the spin-orbit torque switching of the antiferromagnetic Ir$_{20}$Mn$_{80}$ by the spin Hall current of Pt. The presented results highlight a great potential of the magnetron-sputtered Ir$_{20}$Mn$_{80}$ film for exploring the topological antiferromagnet-based physics and spintronics applications.
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Received: 27 November 2022
Revised: 19 January 2023
Accepted manuscript online: 08 February 2023
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PACS:
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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71.70.Ej
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(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
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| Fund: Project supported by the Tencent Foundation through the XPLORER PRIZE, the National Key Research and Development Program of China (Grant Nos. 2018YFB0407602 and 2021YFB3601303), and the National Natural Science Foundation of China (Grant Nos. 61627813, 11904017, 92164206, and 61571023). |
Corresponding Authors:
Dapeng Zhu, Weisheng Zhao
E-mail: zhudp@buaa.edu.cn;weisheng.zhao@buaa.edu.cn
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Cite this article:
Danrong Xiong(熊丹荣), Yuhao Jiang(蒋宇昊), Daoqian Zhu(朱道乾), Ao Du(杜奥), Zongxia Guo(郭宗夏), Shiyang Lu(卢世阳), Chunxu Wang(王春旭), Qingtao Xia(夏清涛), Dapeng Zhu(朱大鹏), and Weisheng Zhao(赵巍胜) Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir20Mn80 2023 Chin. Phys. B 32 057501
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