1 The Key Laboratory of Advanced Semiconductor Devices and Materials, Xi'an University of Posts&Telecommunications, Xi'an 710121, China; 2 The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
Abstract The -GaO films with different thicknesses are prepared by an atomic layer deposition system. The influence of film thickness on the crystal quality is obvious, indicating that the thicker films perform better crystal quality, which is verified from x-ray diffraction (XRD) and scanning electron microscope (SEM) results. The GaO-based solar blind photodetectors with different thicknesses are fabricated and studied. The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness. The photodetectors with inter-fingered structure based on 900 growth cycles -GaO active layers (corresponding film thickness of 58 nm) exhibit the best performances including a low dark current of 134 fA, photo-to-dark current ratio of 1.5, photoresponsivity of 1.56 A/W, detectivity of 2.77 Jones, and external quantum efficiency of 764.49% at a bias voltage of 10 V under 254-nm DUV illumination. The photoresponse rejection ratio () is up to . In addition, we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure. As the finger spacing decreases from 50 μm to 10 μm, the photoresponsivity, detectivity, and external quantum efficiency increase significantly.
Fund: Project supported by the Natural Science Basic Research Program of Shaanxi Province, China (Grant No. 2022JQ-701) and the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 21JK0919).
Shao-Qing Wang(王少青), Ni-Ni Cheng(程妮妮), Hai-An Wang(王海安), Yi-Fan Jia(贾一凡), Qin Lu(陆芹), Jing Ning(宁静), Yue Hao(郝跃), Xiang-Tai Liu(刘祥泰), and Hai-Feng Chen(陈海峰) Thickness effect on solar-blind photoelectric properties of ultrathin β-Ga2O3 films prepared by atomic layer deposition 2023 Chin. Phys. B 32 048502
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Effects of preparation parameters on growth and properties of β-Ga2O3 film Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
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