| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Focused-ion-beam assisted technique for achieving high pressure by uniaxial-pressure devices |
| Di Liu(刘迪)1,2, Xingyu Wang(王兴玉)1,2, Zezhong Li(李泽众)1,2, Xiaoyan Ma(马肖燕)1,2, and Shiliang Li(李世亮)1,2,3,† |
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China |
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Abstract Uniaxial pressure or strain can introduce a symmetry-breaking distortion on the lattice and may alter the ground states of a material. Compared to hydrostatic pressure, a unique feature of the uniaxial-pressure measurements is that a tensile force can be applied and thus a "negative" pressure can be achieved. In doing so, both ends of the sample are usually glued on the frame of the uniaxial-pressure device. The maximum force that can be applied onto the sample is sometimes limited by the shear strength of the glue, the quality of the interface between the sample and the glue, etc. Here we use focused ion beam to reduce the width of the middle part of the sample, which can significantly increase the effective pressure applied on the sample. By applying this technique to a home-made piezobender-based uniaxial-pressure device, we can easily increase the effective pressure by one or two orders of magnitude as shown by the change of the superconducting transition temperature of an iron-based superconductor. Our method thus provides a possible way to increase the upper limit of the pressure for the uniaxial-pressure devices.
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Received: 04 November 2022
Revised: 09 December 2022
Accepted manuscript online: 16 December 2022
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PACS:
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74.62.Fj
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(Effects of pressure)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1403402, 2021YFA1400401, 2020YFA0406003, and 2017YFA0302903), the National Natural Science Foundation of China (Grant Nos. 11961160699 and 11874401), and the Chinese Academy of Sciences (Grant Nos. XDB33000000 and GJTD-2020-01). |
Corresponding Authors:
Shiliang Li
E-mail: slli@iphy.ac.cn
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Cite this article:
Di Liu(刘迪), Xingyu Wang(王兴玉), Zezhong Li(李泽众), Xiaoyan Ma(马肖燕), and Shiliang Li(李世亮) Focused-ion-beam assisted technique for achieving high pressure by uniaxial-pressure devices 2023 Chin. Phys. B 32 047401
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