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High power semiconductor laser array with single-mode emission |
| Peng Jia(贾鹏)1, Zhi-Jun Zhang(张志军)4, Yong-Yi Chen(陈泳屹)1,5,†, Zai-Jin Li(李再金)2,‡, Li Qin(秦莉)1, Lei Liang(梁磊)1, Yu-Xin Lei(雷宇鑫)1, Cheng Qiu(邱橙)1, Yue Song(宋悦)1, Xiao-Nan Shan(单肖楠)1, Yong-Qiang Ning(宁永强)1, Yi Qu(曲轶)2, and Li-Jun Wang(王立军)1,3 |
1 State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2 Academician Team Innovation Center of Hainan Province, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China;
3 Peng Cheng Laboratory No. 2, Xingke 1st Street, Nanshan, Shenzhen, China;
4 Liaoning Institute of Science and Technology, Anshan 114051, China;
5 Jlight Semiconductor Technology Co., Ltd., Changchun 130033, China |
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Abstract The semiconductor laser array with single-mode emission is presented in this paper. The 6-μ m-wide ridge waveguides (RWGs) are fabricated to select the lateral mode. Thus the fundamental mode of laser array can be obtained by the RWGs. And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A, after that, a kink will appear. The slow axis (SA) far-field divergence angle of the unit is 13.65°. The beam quality factor M2 of the units determined by the second-order moment (SOM) method, is 1.2. This single-mode emission laser array can be used for laser processing.
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Received: 13 September 2021
Revised: 05 November 2021
Accepted manuscript online:
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PACS:
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42.55.Px
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(Semiconductor lasers; laser diodes)
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78.55.Cr
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(III-V semiconductors)
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78.67.De
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(Quantum wells)
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42.60.Pk
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(Continuous operation)
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| Fund: Project supported by the National Science and Technology Major Project of China (Grant Nos.2018YFB0504600 and 2017YFB0405102),the Frontier Science Key Program of the President of the Chinese Academy of Sciences (Grant No.QYZDY-SSW-JSC006),the Pilot Project of the Chinese Academy of Sciences (Grant No.XDB43030302),the National Natural Science Foundation of China (Grant Nos.62090051,62090052,62090054,11874353,61935009,61934003,61904179,61727822,61805236,62004194,and 61991433),the Science and Technology Development Project of Jilin Province,China (Grant Nos.20200401062GX,202001069GX,20200501006GX,20200501007GX,20200501008GX,and 20190302042GX),the Key Research and Development Project of Guangdong Province,China (Grant No.2020B090922003),the Equipment Pre-research,China (Grant No.2006ZYGG0304),the Special Scientific Research Project of the Academician Innovation Platform in Hainan Province,China (Grant No.YSPTZX202034),and the Dawn Talent Training Program of CIOMP,China. |
Corresponding Authors:
Yong-Yi Chen,E-mail:chenyy@ciomp.ac.cn;Zai-Jin Li,E-mail:lizaijin@126.com
E-mail: chenyy@ciomp.ac.cn;lizaijin@126.com
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| About author: 2021-11-6 |
Cite this article:
Peng Jia(贾鹏), Zhi-Jun Zhang(张志军), Yong-Yi Chen(陈泳屹), Zai-Jin Li(李再金), Li Qin(秦莉), Lei Liang(梁磊), Yu-Xin Lei(雷宇鑫), Cheng Qiu(邱橙), Yue Song(宋悦), Xiao-Nan Shan(单肖楠), Yong-Qiang Ning(宁永强), Yi Qu(曲轶), and Li-Jun Wang(王立军) High power semiconductor laser array with single-mode emission 2022 Chin. Phys. B 31 054209
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