Strain-dependent resistance and giant gauge factor in monolayer WSe2

doi:10.1088/1674-1056/ac11d2

Abstract We report the strong dependence of resistance on uniaxial strain in monolayer WSe₂ at various temperatures, where the gauge factor can reach as large as 2400. The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole. Upon increasing strain, Berry curvature dipole can generate net orbital magnetization, which would introduce additional magnetic scattering, decreasing the mobility and thus conductivity. Our work demonstrates the strain engineering of Berry curvature and thus the transport properties, making monolayer WSe₂ potential for application in the highly sensitive strain sensors and high-performance flexible electronics.

Keywords: strain engineering van der Waals materials symmetry breaking orbital magnetization Berry curvature

Received: 19 June 2021
Revised: 28 June 2021
Accepted manuscript online: 07 July 2021

PACS:	72.20.Fr	(Low-field transport and mobility; piezoresistance)
	72.15.Qm	(Scattering mechanisms and Kondo effect)
	73.63.-b	(Electronic transport in nanoscale materials and structures)
	75.25.Dk	(Orbital, charge, and other orders, including coupling of these orders)

Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFA0703703) and the National Natural Science Foundation of China (Grant Nos. 91964201, 61825401, and 11774004).

Corresponding Authors: Zhi-Min Liao
E-mail: liaozm@pku.edu.cn

Cite this article:

Mao-Sen Qin(秦茂森), Xing-Guo Ye(叶兴国), Peng-Fei Zhu(朱鹏飞), Wen-Zheng Xu(徐文正), Jing Liang(梁晶), Kaihui Liu(刘开辉), and Zhi-Min Liao(廖志敏) Strain-dependent resistance and giant gauge factor in monolayer WSe₂ 2021 Chin. Phys. B 30 097203

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Strain-dependent resistance and giant gauge factor in monolayer WSe₂