A simple method to synthesize worm-like AlN nanowires and its field emission studies

doi:10.1088/1674-1056/abe3e7

Abstract The worm-like AlN nanowires are fabricated by the plasma-enhanced chemical vapor deposition (PECVD) on Si substrates through using Al powder and N₂ as precursors, CaF₂ as fluxing medium, Au as catalyst, respectively. The as-grown worm-like AlN nanowires each have a polycrystalline and hexagonal wurtzite structure. Their diameters are about 300 nm, and the lengths are over 10 μm. The growth mechanism of worm-like AlN nanowires is discussed. Hydrogen plasma plays a very important role in forming the polycrystalline structure and rough surfaces of worm-like AlN nanowires. The worm-like AlN nanowires exhibit an excellent field-emission (FE) property with a low turn-on field of 4.5 V/μm at a current density of 0.01 mA/cm² and low threshold field of 9.9 V/μm at 1 mA/cm². The emission current densities of worm-like AlN nanowires each have a good stability. The enhanced FE properties of worm-like AlN nanowires may be due to their polycrystalline and rough structure with nanosize and high aspect ratio. The excellent FE properties of worm-like AlN nanowires can be explained by a grain boundary conduction mechanism. The results demonstrate that the worm-like AlN nanowires prepared by the proposed simple and the PECVD method possesses the potential applications in photoelectric and field-emission devices.

Keywords: worm-like aluminum nitride nanowires growth mechanism plasma enhanced chemical vapor deposition field-emission property

Received: 18 December 2020
Revised: 25 January 2021
Accepted manuscript online: 07 February 2021

PACS:	73.61.Ey	(III-V semiconductors)
	73.90.+f	(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
	81.05.-t	(Specific materials: fabrication, treatment, testing, and analysis)
	81.07.Gf	(Nanowires)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11774017 and 51761135129).

Corresponding Authors: Ru-Zhi Wang
E-mail: wrz@bjut.edu.cn

Cite this article:

Qi Liang(梁琦), Meng-Qi Yang(杨孟骐), Chang-Hao Wang(王长昊), and Ru-Zhi Wang(王如志) A simple method to synthesize worm-like AlN nanowires and its field emission studies 2021 Chin. Phys. B 30 087302

[1] Zheng W, Huang F, Zheng R and Wu H 2015 Adv. Mater. 27 3921
[2] Liu F, Li L F, Guo T Y, Gan H B, Mo X S, Chen J, Deng S Z and Xu N S 2012 Nanoscale Res. Lett. 7 454
[3] Ali Y A and Teker K 2019 Microelectron. Eng. 211 26
[4] Zhao S, Djavid M and Mi Z 2015 Nano Lett. 15 7006
[5] Laleyan D A, Zhao S, Woo S Y, Tran H N, Le H B, Szkopek T, Guo H, Botton G A and Mi Z 2017 Nano Lett. 17 3738
[6] Mi Z, Zhao S, Woo S Y, Bugnet M, Djavid M, Liu X, Kang J, Kong X, Ji W, Guo H, Liu Z and Botton G A 2016 J. Phys. D: Appl. Phys. 49 364006
[7] Shen L, Lv W, Wang N, Wu L, Qi D, Ma Y and Lei W 2017 CrystEngComm 19 5940
[8] Redkin A N, Yakimov E E, Roshchupkin D V and Korepanov V I 2019 Thin Solid Films 684 15
[9] Pandey A, Kaushik J, Dutta S, Kapoor A K and Kaur D 2018 Thin Solid Films 666 143
[10] Kurtuldu F, G?k?e A and Kurt A O 2018 J. Mater. Sci: Mater. El. 29 20688
[11] Chen F, Ji X and Zhang Q 2015 J. Alloys Compd. 646 879
[12] Wang G, Chen C, Shao Y, Chen F, Zhang L, Wu Y and Hao X 2019 J. Alloys Compd. 794 171
[13] Zheng M, Jia Q, Liu X and Jia G 2019 Ceram. Int. 45 12387
[14] Teker K 2015 Mater. Sci. Technol. 31 1832
[15] Wu H M and Peng Y W 2015 Ceram. Int. 41 4847
[16] Yu L, Lv Y, Zhang X, Zhang Y, Zou R and Zhang F 2011 J. Cryst. Growth 334 57
[17] Cimalla V, Foerster C, Cengher D, Tonisch K and Ambacher O 2006 Phys. Status Solidi B 243 1476
[18] Byeun Y K, Telle R, Jung S H, Choi S C and Hwang H I 2010 Chem. Vapor Depos. 16 72
[19] Zhao S, Connie A T, Dastjerdi M H, Kong X H, Wang Q, Djavid M, Sadaf S, Liu X D, Shih I, Guo H and Mi Z 2015 Sci. Rep. 5 8332
[20] E Y X, Hao Z, Yu J, Wu C, Liu R, Wang L, Xiong B, Wang J, Han Y, Sun C and Luo Y 2015 Nanoscale Res. Lett. 10 383
[21] Aghdaie A, Haratizadeh H, Mousavi S H, Jafari Mohammadi S A and de Oliveira P W 2015 Ceram. Int. 41 2917
[22] Wang Y Q, Wang R Z, Li Y J, Zhang Y F, Zhu M K, Wang B and Yan H 2013 CrystEngComm 15 1626
[23] Zhao J W, Zhang Y F, Li Y H, Su C H, Song X M, Yan H and Wang R Z 2015 Sci. Rep. 5 17692
[24] Ji Y H, Wang R Z, Feng X Y, Zhang Y F and Yan H 2017 J. Phys. Chem. C 121 24804
[25] Feng X Y, Wang R Z, Liang Q, Ji Y H and Yang M Q 2019 Cryst. Growth Des. 19 2687
[26] Liang Q, Wang R Z, Yang M Q, Wang C H and Liu J W 2020 Acta Phys. Sin. 69 087801 (in Chinese)
[27] Davydov V Y, Kitaev Y E, Goncharuk I N and Smirnov A N 1998 Phys. Rev. B 58 12899
[28] Liang Q, Wang R Z, Yang M Q, Ding Y and Wang C H 2020 Thin Solid Films 710 138266
[29] Lei M, Yang H, Guo Y F, Song B, Li P G and Tang W H 2007 Mater. Sci. Eng. B 143 85
[30] Wu Q, Zhang F, Wang X Z, Liu C and Hu Z 2007 J. Phys. Chem. C 111 12639
[31] Xu C K, Xue L, Yin C R and Wang G H 2003 Phys. Status Solidi A 198 329
[32] Yu L, Hu Z, Ma Y, Huo K, Chen Y, Sang H, Lin W and Lu Y 2007 Diam. Relat. Mater. 16 1636
[33] Zhang F, Wu Q, Wang X B, Liu N, Yang J, Hu Y M, Yu Le S, Wang X Z, Hu Z and Zhu J M 2009 J. Phys. Chem. C 113 4053
[34] Yeh Y H, Chen K M, Wu Y H, Hsu Y C, Yu T Y and Lee W I 2011 J. Cryst. Growth 333 16
[35] Sprenger J K, Cavanagh A S, Sun H, Wahl K J, Roshko A and George S M 2016 Chem. Mater. 28 5282
[36] Yeh Y H, Chen K M, Wu Y H, Hsu Y C and Lee W I 2011 J. Cryst. Growth 314 9
[37] Liu F, Su Z J, Mo F Y, Li L, Chen Z S, Liu Q R, Chen J, Deng S Z and Xu N S 2011 Nanoscale 3 610
[38] Tang Y, Cong H, Chen Z and Cheng H 2005 Appl. Phys. Lett. 86 233104
[39] Obraztsov A N, Volkov A P and Pavlovski I Y 1998 J. Exp. Theor. Phys. Lett. 68 59
[40] Dinh D V, Kang S M, Yang J H, Kim S W and Yoon D H 2009 J. Cryst. Growth 311 495
[41] Zhao W, Wang R Z, Song Z W, Wang H, Yan H and Chu P K 2013 J. Phys. Chem. C 117 1518

[1]	Synthesis of flower-like WS₂ by chemical vapor deposition Jin-Zi Ding(丁金姿), Wei Ren(任卫), Ai-Ling Feng(冯爱玲), Yao Wang(王垚), Hao-Sen Qiao(乔浩森), Yu-Xin Jia(贾煜欣), Shuang-Xiong Ma(马双雄), and Bo-Yu Zhang(张博宇). Chin. Phys. B, 2021, 30(12): 126201.
[2]	Growth mechanism and modification of electronic and magnetic properties of silicene Liu Hong-Sheng (柳洪盛), Han Nan-Nan (韩楠楠), Zhao Ji-Jun (赵纪军). Chin. Phys. B, 2015, 24(8): 087303.
[3]	The influence of ablation products on the ablation resistance of C/C-SiC composites and the growth mechanism of SiO₂ nanowires Li Xian-Hui (李县辉), Yan Qing-Zhi (燕青芝), Mi Ying-Ying (米应映), Han Yong-Jun (韩永军), Wen Xin (温馨), Ge Chang-Chun (葛昌纯). Chin. Phys. B, 2015, 24(2): 026103.
[4]	Controllable synthesis, characterization, and growth mechanism of hollow Zn_xCd_1-xS spheres generated by a one-step thermal evaporation method Yang Zai-Xing (杨再兴), Zhong Wei (钟伟), Au Chak-Tong (區澤棠), Du You-Wei (都有为). Chin. Phys. B, 2013, 22(10): 108101.
[5]	ZnO microbowls grown on ITO glass substrate through thermal evaporation Zhang Zheng-Lin (张正林), Zheng Gang (郑刚), Qu Feng-Yu (曲凤玉), Wu Xiang (武祥). Chin. Phys. B, 2012, 21(9): 098104.
[6]	Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 ℃ Guo Yan-Qing(郭艳青), Huang Rui(黄锐), Song Jie(宋捷), Wang Xiang(王祥), Song Chao(宋超), and Zhang Yi-Xiong(张奕雄) . Chin. Phys. B, 2012, 21(6): 066106.
[7]	Spontaneous formation of single crystal ZnO nanohelices Wu Xiang(武祥), Cai Wei(蔡伟), and Qu Feng-Yu(曲凤玉). Chin. Phys. B, 2009, 18(4): 1669-1673.
[8]	Ab initio calculation of the growth of Te nanorods and Bi₂Te₃ nanoplatelets Tian Xiao-Qing(田晓庆), Du Shi-Xuan(杜世萱), and Gao Hong-Jun(高鸿钧) . Chin. Phys. B, 2008, 17(1): 286-289.
[9]	ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES Zhang Ze (张泽), S.T.Lee (李述汤). Chin. Phys. B, 2001, 10(13): 111-116.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

A simple method to synthesize worm-like AlN nanowires and its field emission studies

Cite this article:

Online attention