The influence of ablation products on the ablation resistance of C/C-SiC composites and the growth mechanism of SiO2 nanowires

doi:10.1088/1674-1056/24/2/026103

Abstract

Ablation under oxyacetylene torch with heat flux of 4186.8 (10% kW/m² for 20 s was performed to evaluate the ablation resistance of C/C-SiC composites fabricated by chemical vapor infiltration (CVI) combined with liquid silicon infiltration (LSI) process. The results indicated that C/C-SiC composites present a better ablation resistance than C/C composites without doped SiC. The doped SiC and the ablation products SiO₂ derived from it play key roles in ablation process. Bulk quantities of SiO₂ nanowires with diameter of 80 nm-150 nm and length of tens microns were observed on the surface of specimens after ablation. The growth mechanism of the SiO₂ nanowires was interpreted with a developed vapor-liquid-solid (VLS) driven by the temperature gradient.

Keywords: C/C-SiC composites ablation products SiO₂ nanowires growth mechanism

Received: 05 December 2014
Revised: 29 December 2014
Accepted manuscript online:

PACS:	61.46.Km	(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
	65.90.+i	(Other topics in thermal properties of condensed matter)

Fund:

Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110006110025) and the National Natural Science Foundation of China (Grant No. U1134102).

Corresponding Authors: Yan Qing-Zhi, Ge Chang-Chun
E-mail: qzyan@ustb.edu.cn;ccge@mater.ustb.edu.cn

Cite this article:

Li Xian-Hui (李县辉), Yan Qing-Zhi (燕青芝), Mi Ying-Ying (米应映), Han Yong-Jun (韩永军), Wen Xin (温馨), Ge Chang-Chun (葛昌纯) The influence of ablation products on the ablation resistance of C/C-SiC composites and the growth mechanism of SiO₂ nanowires 2015 Chin. Phys. B 24 026103

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The influence of ablation products on the ablation resistance of C/C-SiC composites and the growth mechanism of SiO2 nanowires

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The influence of ablation products on the ablation resistance of C/C-SiC composites and the growth mechanism of SiO₂ nanowires