Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers

doi:10.1088/1674-1056/abc152

Abstract A series of InSb thin films were grown on GaAs substrates by molecular beam epitaxy (MBE). GaSb/AlInSb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer, so as to reduce the system defects. At the same time, the influence of different interface structures of AlInSb on the surface morphology of buffer layer is explored. The propagation mechanism of defects with the growth of buffer layer is compared and analyzed. The relationship between the quality of InSb thin films and the structure of buffer layer is summarized. Finally, the growth of high quality InSb thin films is realized.

Keywords: compound buffers AlInSb/GaSb defect inhibition InSb molecular beam epitaxy (MBE)

Received: 19 July 2020
Revised: 29 August 2020
Accepted manuscript online: 15 October 2020

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	68.55.-a	(Thin film structure and morphology)
	68.65.Cd	(Superlattices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61774130, 11474248, 61790581, and 51973070), the Ph. D. Program Foundation of the Ministry of Education of China (Grant No. 20105303120002), and the National Key Technology Research and Development Program of China (Grant No. 2018YFA0209101).

Corresponding Authors: ^†Corresponding author. E-mail: ruitinghao@semi.ac.cn ^‡Corresponding author. E-mail: wangguowei@semi.ac.cn

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Yong Li(李勇), Xiao-Ming Li(李晓明), Rui-Ting Hao(郝瑞亭), Jie Guo(郭杰), Yu Zhuang(庄玉), Su-Ning Cui(崔素宁), Guo-Shuai Wei(魏国帅), Xiao-Le Ma(马晓乐), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川), and Yao Wang(王耀) Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers 2021 Chin. Phys. B 30 028504

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Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers

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