|
Special Issue:
TOPICAL REVIEW — III-nitride optoelectronic materials and devices
|
| TOPICAL REVIEW—III-nitride optoelectronic materials and devices |
Prev
Next
|
|
|
GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges |
| Wu Jie-Jun (吴洁君), Wang Kun (王昆), Yu Tong-Jun (于彤军), Zhang Guo-Yi (张国义) |
| State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China |
|
|
|
|
Abstract After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy (HVPE) technology, our research results of growing GaN thick layer by a gas flow-modulated HVPE, removing the GaN layer through an efficient self-separation process from sapphire substrate, and modifying the uniformity of multiple wafer growth are presented. The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed, and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting.
|
Received: 21 April 2015
Revised: 13 May 2015
Accepted manuscript online:
|
|
PACS:
|
81.05.Ea
|
(III-V semiconductors)
|
| |
81.10.-h
|
(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
|
| |
81.15.Kk
|
(Vapor phase epitaxy; growth from vapor phase)
|
|
| Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2014AA032605), the National Key Basic Research and Development Program of China (Grant Nos. 2012CB619304 and 2011CB301904), and the National Natural Science Foundation of China (Grant Nos. 61376012, 61474003, and 61327801). |
Corresponding Authors:
Yu Tong-Jun
E-mail: tongjun@pku.edu.cn
|
| About author: 81.05.Ea; 81.10.-h; 81.15.Kk |
Cite this article:
Wu Jie-Jun (吴洁君), Wang Kun (王昆), Yu Tong-Jun (于彤军), Zhang Guo-Yi (张国义) GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges 2015 Chin. Phys. B 24 068106
|
| [1] |
http://www.cree.com/News-and-Events/CreeNews/Press-Releases/2014/March/300LPW-LED-barrier[2015-4-20]
|
| [2] |
Amano H 2013 Jpn. J. Appl. Phys. 52 050001
|
| [3] |
Van Vechten J A 1973 Phys. Rev. B 7 1479
|
| [4] |
Karpiński J, Jun J and Porowski S 1984 J. Cryst. Growth 66 1
|
| [5] |
Porowski S 1995 Acta Phys. Polon. Ser. A: General Physics 87 295
|
| [6] |
Grzegory I 2002 J. Phys.: Condens. Matter 14 11055
|
| [7] |
Vampola K J, Fellows N N, Masui H, et al. 2009 Phys. Stat. Sol. A 206 200
|
| [8] |
Cich M J, Aldaz R I, Chakraborty A, et al. 2012 Appl. Phys. Lett. 101 223509
|
| [9] |
Dwiliński R, Wysmolek A, Baranowski J, et al. 1995 Acta Phys. Polon. A 88 833
|
| [10] |
Dwiliński R, Baranowski J M, Kamińska M, Doradziński R, Garczyński J and Sierzputowski L 1996 Acta Phys. Polon. A 90 763
|
| [11] |
Ketchum D R and Kolis J W 2001 J. Cryst. Growth 222 431
|
| [12] |
Demazeau G, Goglio G, Denis A and Largeteau A 2002 J. Phys.: Condens. Matter. 14 11085
|
| [13] |
Wang B, Callahan M J, Rakes K D, Bouthillette L O, Wang S Q, Bliss D F and Kolis J W 2006 J. Cryst. Growth 287 376
|
| [14] |
Ehrentraut D, Hoshino N, Kagamitani Y, Yoshikawa A, Fukuda T, Itoh H and Kawabata S 2007 J. Mater. Chem. 17 886
|
| [15] |
Dwiliński R, Doradziński R, Garczyński J, et al. 2008 J. Cryst. Growth 310 3911
|
| [16] |
Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski L P, Zajac M and Rudzinski M 2009 J. Cryst. Growth 311 3058
|
| [17] |
Dwiliński R, Doradziński R, Garczyński J, et al. 2009 Phys. Status Solidi C 6 2661
|
| [18] |
Ehrentraut D, Pakalapati R T, Kamber D S, et al. 2013 Jpn. J. Appl. Phys. 52 08JA01
|
| [19] |
Yamane H, Shimada M, Clarke S J and DiSalvo F J 1997 Chem. Mater. 9 413-416
|
| [20] |
Kawamura F, Umeda H, Kawahara M, et al. 2006 Jpn. J. Appl. Phys. 45 2528
|
| [21] |
Gejo R, Kawamura F, Kawahara M, Yoshimura M, Kitaoka Y, Mori Y and Sasaki T 2007 Jpn. J. Appl. Phys. 46 7689
|
| [22] |
Kawamura F, Morishita M, Tanpo M, et al. 2008 J. Cryst. Growth 310 3946
|
| [23] |
Mori Y, Kitaoka Y, Imade M, Kawamura F, Miyoshi N, Yoshimura M and Sasaki T 2010 Phys. Status Solidi A 207 1283
|
| [24] |
Mori Y, Kitaoka Y, Imade M, Kawamura F, Miyoshi N, Yoshimura M and Sasaki T 2011 Phys. Status Solidi C 8 1445
|
| [25] |
Yamada T, Yamane H, Iwata H and Sarayama S 2006 J. Cryst. Growth 286 494
|
| [26] |
Meissner E, Birkmann B, Hussy S, Sun G, Friedrich J and Mueller G 2005 Phys. Stat. Sol. 2 2040
|
| [27] |
Feigelson B N, Frazier R M, Gowda M, Freitas J A, Fatemi M, Mastro M A and Tischler J G 2008 J. Cryst. Growth 310 3934
|
| [28] |
Hennig C, Richter E, Zeimer U, Weyers M and Tränkle G 2006 Phys. Stat. Sol. 3 1466
|
| [29] |
Sone H, Nambu S, Kawaguchi Y, et al. 1999 Jpn, J. Appl. Phys. 38 L356
|
| [30] |
Davis R F, Roskowski A M, Preble E A, et al. 2002 Proc. IEEE 90 993
|
| [31] |
Hennig C, Richter E, Weyers M and Tränkle G 2008 J. Cryst. Growth 310 911
|
| [32] |
Yoshida T, Oshima Y, Eri T, et al. 2008 J. Cryst. Growth 310 5
|
| [33] |
Chao C L, Chiu C H, Lee Y J, Kuo H C, Liu P C, Tsay J D and Cheng S J 2009 Appl. Phys. Lett. 95 051905
|
| [34] |
Wu J, Zhao L, Wen D, et al. 2009 Appl. Surf. Sci. 255 5926
|
| [35] |
Luo W, Wu J, Goldsmith J, Du Y, Yu T, Yang Z and Zhang G 2012 J. Cryst. Growth 340 18
|
| [36] |
Zhang X, Dapkus P D and Rich D H 2000 Appl. Phys. Lett. 77 1496
|
| [37] |
Koleske D D, Wickenden A E, Henry R L, DeSisto W J and Gorman R J 1998 J. Appl. Phys. 84 (4)
|
| [38] |
Motoki K 2010 SEI Tech. Rev. 70 28
|
| [39] |
Koukitu A, Hama S I, Taki T and Seki H 1998 Jpn. J. Appl. Phys. 37 762
|
| [40] |
Li X, Wu J, Liu N, Han T, Kang X, Yu T and Zhang G 2014 Mater. Lett. 132 94
|
| [41] |
Arai T, Hidaka J, Tokunaga H and Matsumoto K 1997 J. Cryst. Growth 170 88
|
| [42] |
Dmitriev V A, Maslennikov V, Soukhoveev V and Kovalenkov US 2006/0011135 A1
|
|
[2006] .
|
| [43] |
Liu N, Wu J, Li W, Luo R, Tong Y and Zhang G 2014 J. Cryst. Growth 388 132
|
| [44] |
Oehler F, Zhu T, Rhode S, Kappers M J, Humphreys C J and Oliver R A 2013 J. Cryst. Growth 383 12
|
| [45] |
Sarzynski M, Leszczynski M, Krysko M, Domagala J Z, Czernecki R and Suski T 2012 Cryst. Res. Technol. 47 321.
|
| [46] |
Hirai A, Jia Z, Schmidt M C, et al. 2007 Appl. Phys. Lett. 91 191906.
|
| [47] |
Wernicke T, Ploch S, Hoffmann V, Knauer A, Weyers M and Kneissl M 2011 Phys. Status Solidi B 248 574
|
| [48] |
Hanser D, Tutor M, Preble E, Williams M, Xu X, Tsvetkov D and Liu L 2007 J. Cryst. Growth 305 372
|
| [49] |
Li X B 2014 GaN Substrate Fabrication and Epitaxial Growth by MOCVD (Beijing: Peking University Press) (in Chinese)
|
| [50] |
Tyagi A, Zhong H, Fellows N N, Iza M, Speck J S, DenBaars S P and Nakamura S 2007 Jpn. J. Appl. Phys. 46 L129
|
| [51] |
Zhao Y, Tanaka S, Pan C C, et al. 2011 Appl. Phys. Express 4 082104
|
| [52] |
Becerra D L, Zhao Y, Oh S H, Pynn C D, Fujito K, DenBaars S P and Nakamura S 2014 Appl. Phys. Lett. 105 171106
|
| [53] |
Zhao Y, Sonoda J, Pan C C, et al. 2010 Appl. Phys. Expres 3 102101
|
| [54] |
Cich M J, Aldaz R I, Chakraborty A, et al. 2012 Appl. Phys. Lett. 101 223509
|
| [55] |
Iveland J, Martinelli L, Peretti J, Speck J S and Weisbuch C 2013 Phys. Rev. Lett. 110 177406
|
| [56] |
Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Phys. Rev. Lett. 91 183507
|
| [57] |
Kim A Y, Götz W, Steigerwald D A, et al. 2001 Phys. Status Solidi A 188 15
|
| [58] |
Chichibu S F, Azuhata T, Sugiyama M, et al. 2001 J. Vac. Sci. Technol. B 19 2177
|
| [59] |
Hammersley S, Watson-Parris D, Dawson P, et al. 2012 J. Appl. Phys. 111 083512
|
| [60] |
Efremov A A, Bochkareva N I, Gorbunov R I, Lavrinovich D A, Rebane Y T, Tarkhin D V and Shreter Y G 2006 Semicond. 40 605
|
| [61] |
Pan C C, Tanaka S, Wu F, et al. 2012 Appl. Phys. Express 5 062103
|
| [62] |
Funato M, Kaneta A, Kawakami Y, Enya Y, Nishizuka K, Ueno M and Nakamura T 2010 Appl. Phys. Express 3 021002
|
| [63] |
Yamamoto S, Zhao Y, Pan C C, et al. 2010 Appl. Phys. Expres 3 122102
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
