Effect of annealing on performance of PEDOT：PSS/n-GaN Schottky solar cells

doi:10.1088/1674-1056/23/7/077303

Abstract We develop a heterojunction-based Schottky solar cell consisting of n-type GaN and PEDOT:PSS and also investigate the effect of annealing on the performance of the solar cell. The results show that the open circuit voltage (V_oc) increases from 0.54 V to 0.56 V, 0.71 V and 0.82 eV while decreases to 0.69 eV after annealing at 100 ℃, 130 ℃, 160 ℃, and 200 ℃, respectively, which can be ascribed to the change of barrier height of PEDOT:PSS/GaN Schottky contact induced by variation of the work function of the PEDOT:PSS. Furthermore, the conductivity and surface roughness measurements of the PEDOT:PSS indicate that annealing can increase the grain size and improve the connectivity between PEDOT and PSS particles, and cause thermal degradation at the same time, which leads to the rise in short-circuit current density (I_sc) up to 160 ℃ and the dropoff in I_sc after annealing at 200 ℃.

Keywords: gallium nitride PEDOT：PSS Schottky solar cell post-annealing

Received: 09 September 2013
Revised: 30 December 2013
Accepted manuscript online:

PACS:	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	79.60.Jv	(Interfaces; heterostructures; nanostructures)

Fund: Project supported by the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. JB141104).

Corresponding Authors: Feng Qian
E-mail: qfeng@mail.xidian.edu.cn

About author: 73.30.+y; 79.60.Jv

Cite this article:

Feng Qian (冯倩), Du Kai (杜锴), Li Yu-Kun (李宇坤), Shi Peng (时鹏), Feng Qing (冯庆) Effect of annealing on performance of PEDOT：PSS/n-GaN Schottky solar cells 2014 Chin. Phys. B 23 077303

[1]	Lai K Y, Lin G J, Lai Y L, Chen Y F and He J H 2010 Appl. Phys. Lett. 96 081103
[2]	Kuo Y K, Chang J Y, Tsai M C and Yen S H 2009 Appl. Phys. Lett. 95 011116
[3]	Pereiro J, Rivera C, Navarro A, Munoz E, Czernecki R, Grzanka S and Leszczynski M 2009 IEEE Quantum Electron. 45 617
[4]	Barnett A, Kirkpatrick D, Honsberg C, Moore D, Wanlass M, Emery K, Schwartz R, Carlson D, Bowden S, Aiken D, Gray A, Kurta S, Kazmerski L, Moriarty T, Steiner M, Gray J, Davenport T, Buelow R, Buelow L, Takacs L, Shatz N, Boeta J, Jani O, Goossen K, Kiamileve F, Doolittle A, Gerguson I, Unger B, Schmidt G, Christensen E and Salzman D 2007 Pro. 22nd Eur. PV Solar Energy Conference, Milan, Italy
[5]	de Vos A 2008 Endoreversible Thermodynamics of Solar Energy Conversion (Oxford: Oxford University Press) p. 95
[6]	Luque A and Marti A 1997 Phys. Rev. Lett. 78 5014
[7]	Zhu Y B, Hu W, Na J, He F, Zhou Y L and Chen C 2011 Chin. Phys. B 20 047301
[8]	Bhupendra K S, Neeraj K and Shahzada A 2009 Solid State Commun. 149 771
[9]	Nakano M, Makino T, Tsukazaki A, Uene K and Ohtomo A 2008 Appl. Phys. Lett. 93 123309
[10]	Matsuki N, Irokawa Y, Matsui T, Kondo M and Sumiya M 2009 Appl. Phys. Express 2 092201
[11]	Matsuki N, Irokawa Y, Nakano Y and Sumiya M 2011 Solar Energy Materials & Solar Cells 95 284
[12]	Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts (Clarendon Press)
[13]	Sze S M 1981 Physics of Semiconductor Devices (2nd ed.) (New York: Wiley-Vch) p. 279
[14]	Norde H 1979 J. Appl. Phys. 50 5052
[15]	Rhee S W and Yun D J 2008 J. Mater. Chem. 18 5437
[16]	Ma H, Yip H L, Huang F and Jen A KY 2010 Adv. Funct. Mater. 20 1371
[17]	Yun D J, Hong K, Kim S H and Yun W M 2011 ACS Appl. Mater. Inter. 3 43
[18]	Aasmundtveti K E, Samuelsen E J, Crispin X, Greczynski G, Osikowicz, Johansson T and Feidenhans R 1999 Synth. Met. 101 561
[19]	Greczynski G, Kugler Th and Salaneck W R 1999 Thin Solid Films 354 129

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Effect of annealing on performance of PEDOT：PSS/n-GaN Schottky solar cells

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