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Theoretical and experimental study on frequency pushing effect of magnetron |
Kang Li(李慷)1,2, Yi Zhang(张益)1,2, Hua-Cheng Zhu(朱铧丞)1,2, Ka-Ma Huang(黄卡玛)1,2, Yang Yang(杨阳)1,2 |
1 School of Electronics and Information Engineering, Sichuan University, Chengdu 610064, China; 2 Key Laboratory of Wireless Power Transmission of Ministry of Education, Chengdu 610064, China |
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Abstract The applications of magnetrons are greatly limited because of the poor output spectrum of the free-running magnetron. Currently, one of the best ways to solve this problem is injection locking. However, the injection locking theory which is widely used nowadays is based on the simplified oscillator, which does not include the frequency pushing effect of the magnetron. In this paper, the theory of injection locking magnetrons with frequency pushing effect is systematically studied. Analytical analysis shows that the locking bandwidth turns larger with the consideration of the pushing parameter (α), and the increase of locking bandwidth is expanded with α increasing. Experimental results show that the locking bandwidth is expanded by 0.3 MHz, 1 MHz, and 1.6 MHz compared with the locking bandwidth from the conventional locking theory under an injection ratio (ρ) of 0.05, 0.075, and 0.1, respectively. This research provides a more accurate prediction of the properties of the injection-locked magnetron.
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Received: 11 July 2019
Revised: 17 September 2019
Accepted manuscript online:
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PACS:
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84.40.Fe
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(Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.))
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85.40.Qx
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(Microcircuit quality, noise, performance, and failure analysis)
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84.30.Vn
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(Filters)
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Fund: Project supported by the Sichuan Science and Technology Program, China (Grant No. 2019YFG0419) and the National Natural Science Foundation of China (Grant No. 61601312). |
Corresponding Authors:
Yang Yang
E-mail: yyang@scu.edu.cn
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Cite this article:
Kang Li(李慷), Yi Zhang(张益), Hua-Cheng Zhu(朱铧丞), Ka-Ma Huang(黄卡玛), Yang Yang(杨阳) Theoretical and experimental study on frequency pushing effect of magnetron 2019 Chin. Phys. B 28 118402
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