Characterization of ion irradiated silicon surfaces ablated by laser-induced breakdown spectroscopy

doi:10.1088/1674-1056/27/8/087401

Abstract Low energy metallic ions, generated by a Q-switched Nd:YAG laser (1064-nm wavelength, 10-mJ energy, 9-nm~12-ns-pulse width, 10¹¹ W/cm² intensity) irradiated on a silicon substrate to modify various properties, such as electrical, morphological, and structural modifications. Thomson parabola technique is used to calculate the energy of these metallic ions whereas the electrical conductivity is calculated with the help of Four-point probe. Interestingly circular tracks forming chain like damage trails are produced via these energetic ions which are carefully examined by optical microscopy. It is observed that excitation, ionization, and cascade collisions are responsible for surface modifications of irradiated samples. Four-point probe analysis revealed that the electrical conductivity of substrate has reduced with increasing trend of atomic number of irradiated metallic ions (Al, Ti, Cu, and Au). The x-ray diffraction analysis elucidated the crystallographic changes leading to reduction of grain size of N-type silicon substrate, which is also associated with the metallic ions used. The decreasing trend of conductivity and grain size is due to thermal stresses, scattering effect, structural imperfections, and non-uniform conduction of energy absorbed by substrate atoms after the ion irradiation.

Keywords: ablation Thomson parabola technique four-point probe

Received: 30 January 2018
Revised: 23 May 2018
Accepted manuscript online:

PACS:	74.25.Kc	(Phonons)
	61.80.Ba	(Ultraviolet, visible, and infrared radiation effects (including laser radiation))
	61.80.Lj	(Atom and molecule irradiation effects)
	61.82.-d	(Radiation effects on specific materials)

Corresponding Authors: T Iqbal, M Abrar
E-mail: tiqbal02@qub.ac.uk;mabrarphy@gmail.com

Cite this article:

T Iqbal, M Abrar, M B Tahir, M Seemab, A Majid, S Rafique Characterization of ion irradiated silicon surfaces ablated by laser-induced breakdown spectroscopy 2018 Chin. Phys. B 27 087401

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Characterization of ion irradiated silicon surfaces ablated by laser-induced breakdown spectroscopy

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