High thermal stability of diamond-cBN-B4C-Si composites

doi:10.1088/1674-1056/26/1/018102

Abstract Improving the thermal stability of diamond and other superhard materials has great significance in various applications. Here, we report the synthesis and characterization of bulk diamond-cBN-B₄C-Si composites sintered at high pressure and high temperature (HPHT, 5.2 GPa, 1620-1680 K for 3-5 min). The results show that the diamond, cBN, B₄C, B_xSiC, SiO₂ and amorphous carbon or a little surplus Si are present in the sintered samples. The onset oxidation temperature of 1673 K in the as-synthesized sample is much higher than that of diamond, cBN, and B₄C. The high thermal stability is ascribed to the covalent bonds of B-C, C-N, and the solid-solution of B_xSiC formed during the sintering process. The results obtained in this work may be useful in preparing superhard materials with high thermal stability.

Keywords: high pressure and high temperature diamond-cBN-B₄C-Si composites high thermal stability

Received: 22 August 2016
Revised: 30 September 2016
Accepted manuscript online:

PACS:	81.05.uj	(Diamond/nanocarbon composites)
	81.20.Ev	(Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation)
	81.70.Pg	(Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51301075) and the Project of Development and Reform Commission of Jilin Province, China (Grant No. 2014Y136).

Corresponding Authors: Pin-Wen Zhu, Hai-Bo Li
E-mail: zhupw@jlu.edu.cn;lihaibo@jlnu.edu.cn

Cite this article:

Hong-Sheng Jia(贾洪声), Pin-Wen Zhu(朱品文), Hao Ye(叶灏), Bin Zuo(左斌), Yuan-Long E(鄂元龙), Shi-Chong Xu(徐仕翀), Ji Li(李季), Hai-Bo Li(李海波), Xiao-Peng Jia(贾晓鹏), Hong-An Ma(马红安) High thermal stability of diamond-cBN-B₄C-Si composites 2017 Chin. Phys. B 26 018102

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