Binding energy of the donor impurities in GaAs-Ga1-xAlxAs quantum well wires with Morse potential in the presence of electric and magnetic fields

doi:10.1088/1674-1056/25/10/100302

Abstract The behavior of a donor in the GaAs-Ga_1-xAl_xAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters (D_e, r_e, and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.

Keywords: Morse potential electric field magnetic field the donor atom quantum well wire

Received: 01 February 2016
Revised: 04 May 2016
Accepted manuscript online:

PACS:	03.65.Ge	(Solutions of wave equations: bound states)
	03.50.De	(Classical electromagnetism, Maxwell equations)
	41.20.-q	(Applied classical electromagnetism)

Fund: Project supported by the Turkish Science Research Council (TÜBİTAK) and the Financial Supports from Akdeniz and Nigde Universities.

Corresponding Authors: Orhan Bayrak
E-mail: bayrak@akdeniz.edu.tr

Cite this article:

Esra Aciksoz, Orhan Bayrak, Asim Soylu Binding energy of the donor impurities in GaAs-Ga_1-xAl_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields 2016 Chin. Phys. B 25 100302

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Binding energy of the donor impurities in GaAs-Ga1-xAlxAs quantum well wires with Morse potential in the presence of electric and magnetic fields

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Binding energy of the donor impurities in GaAs-Ga_1-xAl_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields