| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate |
| Hu Bo (胡泊)a, He Wei (何为)a, Ye Jun (叶军)a b, Tang Jin (汤进)a, Syed Sheraz Ahmada, Zhang Xiang-Qun (张向群)a, Cheng Zhao-Hua (成昭华)a |
a State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
b Department of Physics, Beihang University, Beijing 100191, China |
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Abstract Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of CoSi2 buffer layers were grown on Si (001) substrates. In order to investigate morphology, structure, and magnetic properties of films, scanning tunneling microscope (STM), low energy electron diffraction (LEED), high resolution transmission electron microscopy (HRTEM), and surface magneto-optical Kerr effect (SMOKE) were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of CoSi2 buffer layers. Few CoSi2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic (001) films.
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Received: 04 July 2014
Revised: 19 August 2014
Accepted manuscript online:
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PACS:
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75.30.Gw
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(Magnetic anisotropy)
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75.50.Cc
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(Other ferromagnetic metals and alloys)
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75.60.Jk
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(Magnetization reversal mechanisms)
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75.70.Kw
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(Domain structure (including magnetic bubbles and vortices))
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| Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921801 and 2012CB933102), the National Natural Science Foundation of China (Grant Nos. 11374350, 11034004, 11274361, and 11274033), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131102130005). |
Corresponding Authors:
Cheng Zhao-Hua
E-mail: zhcheng@aphy.iphy.ac.cn
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Cite this article:
Hu Bo (胡泊), He Wei (何为), Ye Jun (叶军), Tang Jin (汤进), Syed Sheraz Ahmad, Zhang Xiang-Qun (张向群), Cheng Zhao-Hua (成昭华) Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate 2015 Chin. Phys. B 24 017502
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