Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

doi:10.1088/1674-1056/23/8/088505

Abstract In this paper, we investigate the single event transient (SET) occurring in partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-μm single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and analyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test (DUT). The dependences of SET characteristics on drain-induced barrier lowering (DIBL) and the parasitic bipolar junction transistor (PBJT) are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.

Keywords: laser test single event transient charge collection partially depleted silicon on insulator

Received: 26 November 2013
Revised: 21 February 2014
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	61.80.Ed	(γ-ray effects)
	94.05.Dd	(Radiation processes)

Corresponding Authors: Bi Jin-Shun
E-mail: bijinshun@ime.ac.cn

Cite this article:

Bi Jin-Shun (毕津顺), Zeng Chuan-Bin (曾传滨), Gao Lin-Chun (高林春), Liu Gang (刘刚), Luo Jia-Jun (罗家俊), Han Zheng-Sheng (韩郑生) Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET 2014 Chin. Phys. B 23 088505

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Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

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