CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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The low-temperature sintering and microwave dielectric properties of (Zn0.7Mg0.3)TiO3 ceramics with H3BO3 |
Shen Guo-Ce (沈国策), Su Hua (苏桦), Zhang Huai-Wu (张怀武), Jing Yu-Lan (荆玉兰), Tang Xiao-Li (唐晓莉) |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract The effects of the addition of H3BO3 on the microstructure, phase formation, and microwave dielectric properties of (Zn0.7Mg0.3)TiO3 ceramics sintered at temperatures ranging from 890 ℃ to 950 ℃ are investigated. H3BO3 as a sintering agent can effectively lower the sintering temperature of ZMT ceramics below 950 ℃ due to the liquid-phase effect. The microwave dielectric properties are found to strongly correlate with the amount of H3BO3. With the increase in H3BO3 content, the dielectric constant (εr) monotonically increases, but the quality factor (Q×f) reaches a maximum at 1 wt% H3BO3, and the apparent density of ZMT ceramics with H3BO3 ≥ 1 wt% gradually decreases. At 950 ℃, the ZMT ceramics with 1% H3BO3 exhibit excellent microwave dielectric properties: εr=19.8, and Q×f=43800 GHz (8.94 GHz).
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Received: 07 November 2012
Revised: 07 January 2013
Accepted manuscript online:
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PACS:
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61171047, 51132003, 51072029, and 61271038), the Program for New Century Excellent Talents in University, and the Fund from the Science and Technology Department of Sichuan Province, China. |
Corresponding Authors:
Su Hua
E-mail: uestcsh@163.com
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Cite this article:
Shen Guo-Ce (沈国策), Su Hua (苏桦), Zhang Huai-Wu (张怀武), Jing Yu-Lan (荆玉兰), Tang Xiao-Li (唐晓莉) The low-temperature sintering and microwave dielectric properties of (Zn0.7Mg0.3)TiO3 ceramics with H3BO3 2013 Chin. Phys. B 22 087801
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