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Oscillation of coercivity between positive and negative in MnxGe1-x:H ferromagnetic semiconductor films |
Qin Yu-Feng (秦羽丰)a b, Yan Shi-Shen (颜世申)a, Xiao Shu-Qin (萧淑琴)a, Li Qiang (李强)a, Dai Zheng-Kun (代正坤)a, Shen Ting-Ting (沈婷婷)a, Yang Ai-Chun (杨爱春)a, Pei Juan (裴娟)a, Kang Shi-Shou (康仕寿)a, Dai You-Yong (代由勇)a, Liu Guo-Lei (刘国磊)a, Chen Yan-Xue (陈延学)a, Mei Liang-Mo (梅良模)a |
a School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China; b Department of Applied Physics, School of Information Science and Engineering, Shandong Agricultural University, Taian 271018, China |
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Abstract Amorphous MnxGe1-x:H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron co-sputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x:H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6:H film, the inverted Hall loop is also observed at 30 K, which is in consistence with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.
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Received: 18 November 2012
Revised: 06 January 2013
Accepted manuscript online:
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PACS:
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75.50.Pp
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(Magnetic semiconductors)
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75.70.Ak
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(Magnetic properties of monolayers and thin films)
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75.50.Ee
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(Antiferromagnetics)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11204164), the National Natural Science Foundation of China (Grant No. 11174184), the National Basic Research Program of China (Grants Nos. 2013CB922303 and 2009CB929202), and the National Funds for Distinguished Young Scholars of China (Grant No. 51125004). |
Corresponding Authors:
Dai You-Yong
E-mail: yydai@sdu.edu.cn
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Cite this article:
Qin Yu-Feng (秦羽丰), Yan Shi-Shen (颜世申), Xiao Shu-Qin (萧淑琴), Li Qiang (李强), Dai Zheng-Kun (代正坤), Shen Ting-Ting (沈婷婷), Yang Ai-Chun (杨爱春), Pei Juan (裴娟), Kang Shi-Shou (康仕寿), Dai You-Yong (代由勇), Liu Guo-Lei (刘国磊), Chen Yan-Xue (陈延学), Mei Liang-Mo (梅良模) Oscillation of coercivity between positive and negative in MnxGe1-x:H ferromagnetic semiconductor films 2013 Chin. Phys. B 22 057503
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