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Chin. Phys. B, 2012, Vol. 21(9): 097302    DOI: 10.1088/1674-1056/21/9/097302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal–semiconductor field-effect transistor

Zhang Xian-Jun (张现军), Yang Yin-Tang (杨银堂), Duan Bao-Xing (段宝兴), Chai Chang-Chun (柴常春), Song Kun (宋坤), Chen Bin (陈斌)
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- and two-dimensional Poisson's equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the DIBL effect. The calculated results reveal that the DMG structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor (SMGFET).
Keywords:  silicon carbide      metal-semiconductor contact      dual material gate  
Received:  03 January 2012      Revised:  23 March 2012      Accepted manuscript online: 
PACS:  73.40.Jn (Metal-to-metal contacts)  
  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the Pre-research Foundation from the National Ministries and Commissions of China (Grant No. 51308030201).
Corresponding Authors:  Zhang Xian-Jun     E-mail:  xianjun_zhang@yahoo.com.cn

Cite this article: 

Zhang Xian-Jun (张现军), Yang Yin-Tang (杨银堂), Duan Bao-Xing (段宝兴), Chai Chang-Chun (柴常春), Song Kun (宋坤), Chen Bin (陈斌) Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal–semiconductor field-effect transistor 2012 Chin. Phys. B 21 097302

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