CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal–semiconductor field-effect transistor |
Zhang Xian-Jun (张现军), Yang Yin-Tang (杨银堂), Duan Bao-Xing (段宝兴), Chai Chang-Chun (柴常春), Song Kun (宋坤), Chen Bin (陈斌) |
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China |
|
|
Abstract Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- and two-dimensional Poisson's equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the DIBL effect. The calculated results reveal that the DMG structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor (SMGFET).
|
Received: 03 January 2012
Revised: 23 March 2012
Accepted manuscript online:
|
PACS:
|
73.40.Jn
|
(Metal-to-metal contacts)
|
|
85.30.Tv
|
(Field effect devices)
|
|
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
|
Fund: Project supported by the Pre-research Foundation from the National Ministries and Commissions of China (Grant No. 51308030201). |
Corresponding Authors:
Zhang Xian-Jun
E-mail: xianjun_zhang@yahoo.com.cn
|
Cite this article:
Zhang Xian-Jun (张现军), Yang Yin-Tang (杨银堂), Duan Bao-Xing (段宝兴), Chai Chang-Chun (柴常春), Song Kun (宋坤), Chen Bin (陈斌) Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal–semiconductor field-effect transistor 2012 Chin. Phys. B 21 097302
|
[1] |
Sayed A and Boeck G 2005 IEEE Trans. Microw. Theory Tech. 53 2441
|
[2] |
Deng X C, Feng Z, Zhang B, Li Z, Li L and Pan H S 2009 Chin. Phys. B 18 3018
|
[3] |
Chen G, Qin Y F, Bai S, Wu P, Li Z Y, Chen Z and Han P 2010 Solid-State Electron. 54 353
|
[4] |
Zhang J P, Ye Y, Zhou C H, Luo X R, Zhang B and Li Z J 2008 Microelectron. Eng. 85 89
|
[5] |
Sriram S, Hagleitner H, Namishia D, Alcorn T, Smith T and Pulz B 2009 IEEE Trans. Electron Dev. 30 952
|
[6] |
Elahipanah H 2010 Superlattice. Microstruct. 48 529
|
[7] |
Long W, Ou H, Kuo J M and Chin K K 1999 IEEE Electron. Dev. Lett. 46 865
|
[8] |
de Vivek K and James D M 1993 IEEE J. Solid-State Circ. 28 169
|
[9] |
Cao Q J, Zhang Y M and Jia L X 2009 Chin. Phys. B 18 4456
|
[10] |
Syrkin A L, Bluet J M and Bastide G 1997 Mater. Sci. Eng. B 46 236
|
[11] |
DESSIS Manual 2004 (ISE TCAD Release 10.0) (Zurich: Integrated Systems Engineering)
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|