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Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells |
Zhu Jun (朱俊)a, Ban Shi-Liang (班士良)a, Ha Si-Hua (哈斯花)b |
a Key Laboratory of Semiconductor Photovoltaic Technology, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China; b Department of Physics, College of Sciences, Inner Mongolia University of Technology, Hohhot 010051, China |
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Abstract A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite GaN/InxGa1-xN quantum wells is presented. The quantum-confined Stark effect induced by the built-in electric field and the ternary mixed crystal effect are considered. The electron states are obtained by iteratively solving the coupled Schrödinger and Poisson equations and the dispersion property of each type of phonon modes is considered in the derivation of Fermi's golden rule to evaluate the transition rates. It is indicated that the interface and half-space phonon scattering play an important role in the process of 1-2 radiative transition. The transition rate is also greatly reduced by the built-in electric field. The present work can be helpful for the structural design and simulation of new semiconductor lasers.
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Received: 02 January 2012
Revised: 21 March 2012
Accepted manuscript online:
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PACS:
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73.21.Fg
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(Quantum wells)
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72.10.Di
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(Scattering by phonons, magnons, and other nonlocalized excitations)
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77.65.Ly
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(Strain-induced piezoelectric fields)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60966001) and the Science Foundation of Inner Mongolia Autonomous Region, China (Grant No. 2010BS0102). |
Corresponding Authors:
Ban Shi-Liang
E-mail: slban@imu.edu.cn
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Cite this article:
Zhu Jun (朱俊), Ban Shi-Liang (班士良), Ha Si-Hua (哈斯花) Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells 2012 Chin. Phys. B 21 097301
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