Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers

doi:10.1088/1674-1056/21/4/046801

Abstract Epitaxial graphene is synthesized by silicon sublimation from the Si-terminated 6H-SiC substrate. The effects of graphitization temperature on the thickness and surface morphology of epitaxial graphene are investigated. X-ray photoelectron spectroscopy spectra and atomic force microscopy images reveal that the epitaxial graphene thickness increases and the epitaxial graphene roughness decreases with the increase in graphitization temperature. This means that the thickness and roughness of epitaxial graphene films can be modulated by varying the graphitization temperature. In addition, the electrical properties of epitaxial graphene film are also investigated by Hall effect measurement.

Keywords: epitaxial graphene thickness morphology graphitization temperature

Received: 24 November 2011
Revised: 23 December 2011
Accepted manuscript online:

PACS:	68.55.J-	(Morphology of films)
	73.50.h

Fund: Project supported by the Program for New Century Excellent Talents in University (Grant No. NCET-10-0291), the Fundamental Research Funds for the Central Universities (Grant Nos. ZYGX2009X005 and ZYGX2010J031), the Startup Research Project of University of Electronic Science and Technology of China (Grant No. Y02002010301041), and the National Natural Science Foundation of China (Grant Nos. 50832007 and 11074285).

Corresponding Authors: Chen Yuan-Fu,yfchen@uestc.edu.cn;Li Ping-Jian,lipingjian@gmail.com
E-mail: yfchen@uestc.edu.cn;lipingjian@gmail.com

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Hao Xin(郝昕), Chen Yuan-Fu(陈远富), Li Ping-Jian(李萍剑), Wang Ze-Gao(王泽高), Liu Jing-Bo(刘竞博), He Jia-Rui(贺加瑞), Fan Rui(樊睿), Sun Ji-Rong(孙继荣), Zhang Wan-Li(张万里), and Li Yan-Rong(李言荣) Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers 2012 Chin. Phys. B 21 046801

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Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers

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