Abstract We investigate the band structure of a compressively strained In(Ga)As/In0.53Ga0.47As quantum well (QW) on an InP substrate using the eight-band k·p theory. Aiming at the emission wavelength around 2.33 μm, we discuss the influences of temperature, strain and well width on the band structure and on the emission wavelength of the QW. The wavelength increases with the increase of temperature, strain and well width. Furthermore, we design an InAs /In0.53Ga0.47As QW with a well width of 4.1 nm emitting at 2.33 μm by optimizing the strain and the well width.
Wang Ming(汪明), Gu Yong-Xian(谷永先), Ji Hai-Ming(季海铭), Yang Tao(杨涛), and Wang Zhan-Guo(王占国) Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model 2011 Chin. Phys. B 20 077301
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