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Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal |
Liu Jie(刘洁)a), Zhao Yan(赵艳)a), Jiang Yi-Jian(蒋毅坚)a), and Liu Yu-Long(刘玉龙)b)† |
a Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China; b Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract In this paper, we investigate the laser irradiation of ZnO single crystals and its influence on photoluminescence. Our study shows that the photoluminescence of ZnO single crystals strongly depends on surface morphologies. The ultraviolet emissions of laser treated-ZnO under 200 mJ/cm2 become stronger, whereas for those deteriorated by irradiation above 200 mJ/cm2, the green emissions centred at 2.53 eV are significantly enhanced with a red-shift to 2.19 eV, probably due to the changes in the charge states of the defects. Enhanced yellow-green emissions are well resolved into four peaks at around 1.98, 2.19, 2.36, and 2.53 eV due to a shallow irradiation depth. Possible origins are proposed and discussed.
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Received: 12 April 2010
Revised: 07 May 2010
Accepted manuscript online:
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PACS:
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61.80.Ba
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(Ultraviolet, visible, and infrared radiation effects (including laser radiation))
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61.82.Fk
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(Semiconductors)
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68.35.B-
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(Structure of clean surfaces (and surface reconstruction))
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78.55.Et
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(II-VI semiconductors)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10974009). |
Cite this article:
Liu Jie(刘洁), Zhao Yan(赵艳), Jiang Yi-Jian(蒋毅坚), and Liu Yu-Long(刘玉龙) Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal 2010 Chin. Phys. B 19 087801
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